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Product Detailed Parameters
- Description：TRANS NPN DARL 60V 4A TO-126
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：NPN - Darlington
- Current - Collector (Ic) (Max)：4:00 AM
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：2.5V @ 30mA, 1.5A
- Current - Collector Cutoff (Max)：500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 1.5A, 3V
- Power - Max：40 W
- Frequency - Transition：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126
- Grade：-
- Qualification：-
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Overview
The BD677 is an NPN power Darlington transistor manufactured by onsemi using planar base island technology. It features a monolithic Darlington configuration with an integrated antiparallel collector-emitter diode. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 60 V, a maximum DC collector current of 4 A, and a power dissipation (Pd) of 40 W. The device offers high hFE linearity and high transition frequency (fT). It is housed in a TO-126-3 through-hole package and supports a maximum operating temperature of +150°C.
Feature Summary
- Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
- High hFE linearity for improved signal fidelity
- High transition frequency (fT) performance
Applications
- Power amplifier circuits
- Switching applications requiring high gain
- Motor control interfaces
Procurement Notes
Verify the specific manufacturer origin as the BD677 part number has been produced by multiple vendors including STMicroelectronics. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as availability varies significantly between sources. Ensure the package type matches the design requirements, typically TO-126-3 for this specification.
Selection Notes
Select the BD677 when high current drive capability and high gain are required in a single component. The integrated antiparallel diode simplifies circuit design for inductive loads. Consider the 40 W power dissipation rating and thermal management needs for the TO-126-3 package. Verify that the 60 V voltage rating meets the application's peak voltage requirements.
Part Context
The BD677 belongs to the family of NPN power Darlington transistors. These devices are designed for applications requiring high current switching and amplification. The monolithic construction ensures reliability and consistent performance characteristics compared to discrete Darlington pairs.
Replacement Considerations
Cross-reference with other manufacturers offering equivalent NPN Darlington transistors with similar 60 V, 4 A ratings. Check pinout compatibility and thermal resistance values before substitution.
