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Product Detailed Parameters
- Description：TRANS NPN DARL 60V 4A TO-126-3
- Series：-
- Mfr：onsemi
- Package：Tube,Tube
- Transistor Type：NPN - Darlington
- Current - Collector (Ic) (Max)：4:00 AM
- Voltage - Collector Emitter Breakdown (Max)：60 V
- Vce Saturation (Max) @ Ib, Ic：2.8V @ 40mA, 2A
- Current - Collector Cutoff (Max)：500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 2A, 3V
- Power - Max：40 W
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126-3
- Grade：-
- Qualification：-
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Overview
The BD677ASTU is an NPN power Darlington transistor manufactured by onsemi. It features a monolithic Darlington configuration with an integrated antiparallel collector-emitter diode. The device utilizes planar base island technology for robust performance. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 60 V, a maximum collector-base voltage (VCBO) of 60 V, and a maximum emitter-base voltage (VEBO) of 5 V. It supports a continuous DC collector current of 4 A with a power dissipation capability of 40 W. The component operates at a maximum junction temperature of +150°C and offers a minimum DC current gain (hFE) of 750.
Feature Summary
- Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
- Good hFE linearity across operating ranges
- High transition frequency (fT) for improved switching performance
Applications
- High-current switching applications
- Power amplifier stages
- Motor control circuits
Procurement Notes
Verify the specific suffix 'STU' against official onsemi documentation to confirm package type and tape-and-reel specifications. Ensure the manufacturer designation matches onsemi rather than STMicroelectronics, as part number similarities exist across vendors. Confirm RoHS compliance status through the latest datasheet revision before procurement.
Selection Notes
Select this component when high current gain and integrated flyback protection are required in a single package. The 4 A rating suits moderate power switching tasks. Verify thermal management requirements for the SOT-32-3 package to ensure adequate heat dissipation within the specified temperature limits.
Part Context
This device belongs to the BD677 series of power Darlington transistors. It is designed for general-purpose high-power switching and amplification. The monolithic construction ensures reliability and consistent performance characteristics typical of planar base island technology used in modern power semiconductor devices.
Replacement Considerations
Check for direct substitutes such as the BD678 (PNP counterpart) or other NPN Darlington pairs with matching voltage and current ratings. Verify pinout compatibility and thermal resistance values before substituting.
