BD677G

BD677G

$0.30
  • Description:TRANS NPN DARL 60V 4A TO-126
  • Series:-

SKU:09ded95fe4dc Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN DARL 60V 4A TO-126
  • Series:-
  • Mfr:onsemi
  • Package:Bulk,Bulk
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):4:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:2.5V @ 30mA, 1.5A
  • Current - Collector Cutoff (Max):500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 1.5A, 3V
  • Power - Max:40 W
  • Frequency - Transition:-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126
  • Grade:-
  • Qualification:-

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BD677G

Overview

The BD677G is a complementary silicon power Darlington transistor manufactured by onsemi. It features a monolithic Darlington configuration with an integrated antiparallel collector-emitter diode, designed for high linearity and performance in planar base island technology. The device supports voltage ranges up to 400V and includes both NPN and PNP polarities within the series. Key electrical characteristics include a maximum collector current of 8A, a collector-emitter breakdown voltage of 100V, and a power dissipation capacity of 70W. The component operates within a temperature range of -55°C to +150°C and utilizes a TO-220AB package for through-hole mounting.

Feature Summary

  • Monolithic Darlington configuration ensures high current gain and linearity
  • Integrated antiparallel collector-emitter diode simplifies circuit design
  • Planar base island technology provides robust thermal and electrical performance

Applications

  • High-power audio amplifiers
  • Motor control circuits
  • Power switching applications

Procurement Notes

Verify the specific suffix (e.g., G) against the manufacturer's datasheet to confirm RoHS compliance and packaging details. Ensure the ordering part number matches the exact polarity (NPN or PNP) required for the complementary pair application. Cross-reference the latest revision of the data sheet for any updates to mechanical dimensions or thermal resistance values before finalizing procurement.

Selection Notes

Select the BD677G when a high-current, high-voltage Darlington solution is needed with integrated flyback protection. Consider the thermal management requirements due to the 70W power dissipation rating. Verify that the operating voltage does not exceed the 100V limit and that the load current remains within the 8A continuous rating. Ensure compatibility with the driving circuitry for adequate base current delivery.

Part Context

The BD677G belongs to the BD677 series of complementary silicon power Darlington transistors from onsemi. This series is engineered for applications requiring high reliability and efficiency in power handling. The devices are built using advanced planar technology to ensure consistent performance across varying temperature conditions and operational stresses.

Replacement Considerations

Check for direct pin-compatible substitutes within the same family or other manufacturers offering similar Darlington configurations. Verify that alternative parts meet or exceed the 100V VCEO, 8A IC, and 70W Pd specifications. Ensure the replacement maintains the same package type and thermal characteristics for seamless integration.

BD677GBD677G
$0.30
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