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The BD679AG is an NPN power Darlington transistor manufactured by onsemi. It utilizes planar base island technology with a monolithic Darlington configuration and features an integrated antiparallel collector-emitter diode. The device supports a maximum continuous collector current of 4 A and a collector-emitter voltage of 80 V. It operates within a temperature range of -65 °C to +150 °C and is housed in a TO-220 package.
Verify the manufacturer marking and date code against official onsemi documentation. Confirm the package type matches the required thermal and mechanical specifications. Ensure the component meets the specific electrical tolerances defined in the datasheet for your application design.
Select this component when high current gain and robust switching capability are required. The integrated diode simplifies circuit design for inductive loads. Consider the thermal management requirements associated with the TO-220 package and the specified operating temperature range.
This part belongs to onsemi's portfolio of Darlington transistors, which offer high current gain and simplified drive requirements compared to standard bipolar junction transistors. The BD679 series is designed for applications requiring reliable performance in power handling scenarios.