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Product Detailed Parameters
- Description：TRANS PNP DARL 80V 4A TO-126
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：PNP - Darlington
- Current - Collector (Ic) (Max)：4:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：2.5V @ 30mA, 1.5A
- Current - Collector Cutoff (Max)：500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 1.5A, 3V
- Power - Max：40 W
- Frequency - Transition：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126
- Grade：-
- Qualification：-
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Overview
The BD680G is a plastic, medium-power silicon PNP Darlington transistor manufactured by onsemi. It features a monolithic construction with a collector-emitter voltage rating of 80 Vdc and a maximum collector current of 4.0 Adc. The device operates within a junction temperature range of -55 to +150 °C and offers a minimum DC current gain (hFE) of 750 at specified test conditions. It is housed in a TO-225 package.
Feature Summary
- Monolithic Darlington configuration
- High DC current gain
- Pb-Free and RoHS Compliant
Applications
- Output devices in complementary general-purpose amplifier applications
Procurement Notes
Verify the specific part number against the manufacturer's official ordering information to confirm current availability status. Check for any discontinuation notices or recommended alternatives provided by onsemi. Ensure the procurement channel provides valid traceability documentation consistent with the datasheet specifications.
Selection Notes
Select this component based on its 80 V collector-emitter voltage rating and 4.0 A continuous current capability. Consider the thermal resistance characteristics and safe operating area curves for power dissipation requirements. Verify compatibility with complementary NPN transistors from the same series for balanced amplifier designs.
Part Context
This device belongs to a series of plastic, medium-power silicon PNP Darlingtons that includes complementary variants. The series is designed for general-purpose amplification tasks. The BD680G specifically provides an 80 V breakdown voltage, distinguishing it from lower or higher voltage siblings in the lineup.
Replacement Considerations
The datasheet notes equivalence to MJE 701. Verify pinout and electrical parameters match before substitution. Contact onsemi representatives for updated recommendations if the device is discontinued.
FAQ
What is the maximum collector-emitter voltage for the BD680G?
The maximum collector-emitter voltage (VCEO) for the BD680G is 80 Vdc.
Is the BD680G RoHS compliant?
Yes, the BD680G is Pb-Free and RoHS Compliant.
What is the minimum DC current gain (hFE) for this device?
The minimum DC current gain (hFE) is 750 when tested at IC = 1.5 Adc and VCE = 3.0 Vdc.
