BF422RL1G

Single Bipolar Transistors Overview

The BF422RL1G is a small signal NPN bipolar junction transistor manufactured by onsemi. It features a single-element silicon construction housed in a TO-92 cylindrical plastic package. The device supports a maximum collector current of 0.5 A and a collector-emitter breakdown voltage of 250 V. Key electrical characteristics include a minimum DC current gain (hFE) of 50 and a maximum collector capacitance of 1.6 pF. It operates within a temperature range up to 150 °C with a maximum power dissipation of 1.5 W.

Single Bipolar Transistors Feature Summary

• High voltage capability suitable for demanding switching applications
• Robust thermal performance with high maximum operating temperature
• Standard through-hole packaging for reliable mounting

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Low-power amplification stages
• Driver circuits for low-current loads

Single Bipolar Transistors Procurement Notes

Verify the component marking against official datasheets to confirm authenticity, as counterfeit small-signal transistors exist. Ensure the TO-92 package variant matches the required lead configuration. Check for RoHS compliance status if environmental regulations apply to the final assembly. Confirm that the supplier provides traceable documentation for the specific batch number.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor is required for low-current applications. The 250 V rating distinguishes it from standard low-voltage alternatives. Consider the TO-92 package constraints regarding thermal dissipation and board space. Verify that the 0.5 A current limit meets the load requirements without exceeding safe operating area boundaries.

Single Bipolar Transistors Part Context

This part belongs to the general-purpose small signal transistor category. It serves as a fundamental active element in analog and digital circuit designs. The TO-92 form factor ensures compatibility with legacy and modern through-hole manufacturing processes. It complements other discrete semiconductors in power management and signal conditioning roles.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the 250 V breakdown voltage and 0.5 A current ratings. Verify pinout compatibility for the TO-92 package to prevent circuit damage during installation.