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The BF776E6327FTSA1 is a high-performance NPN bipolar RF transistor manufactured by Infineon Technologies. It utilizes silicon technology and is housed in an SOT-343 package with four pins, where pin 1 is the collector, pin 2 is the emitter, pin 3 is the collector, and pin 4 is the emitter. The device is designed for low noise amplifier applications, featuring a typical minimum noise figure of 0.8 dB at 1.8 GHz. It supports a wide range of non-automotive wireless communication standards including WLAN, WiMax, UWB, Bluetooth, GPS, SDARS, DAB, LNB, UMTS/LTE, and ISM bands.
Verify the exact suffix against official documentation, as 'F' may indicate specific tape-and-reel or marking variations compared to the 'H' variant. Confirm end-of-life status and discontinuation notifications prior to finalizing designs. Ensure ESD handling precautions are observed during assembly due to device sensitivity.
Select this component for non-automotive RF front-end designs requiring low noise amplification. Compare noise figures and gain characteristics against alternative NPN RF transistors in the SOT-343 package. Verify compatibility with target frequency bands and impedance matching networks for optimal performance in wireless systems.
This part belongs to the BF776 series of high-performance NPN bipolar RF transistors from Infineon. It shares functional similarities with other variants like BF776E6327HTSA1 but may differ in packaging or marking specifics. The series is targeted at general-purpose RF amplification in consumer electronics and wireless communication devices.
BF776E6327HTSA1