BFG10/X,215

BFG10/X,215

$0.88
  • Description:RF TRANS NPN 8V 1.9GHZ SOT-143B
  • Series:-

SKU:98ca8d1cece8 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 8V 1.9GHZ SOT-143B
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):8V
  • Frequency - Transition:1.9GHz
  • Noise Figure (dB Typ @ f):-
  • Gain:7dB
  • Power - Max:400mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:25 @ 50mA, 5V
  • Current - Collector (Ic) (Max):250mA
  • Operating Temperature:175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-253-4, TO-253AA
  • Supplier Device Package:SOT-143B
  • Grade:-
  • Qualification:-

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BFG10/X,215

Overview

The BFG10/X,215 is an NPN silicon planar epitaxial RF power transistor designed for high-frequency applications. It operates in the 1.9 GHz area with a maximum frequency rating of 2 GHz. The device is housed in a plastic SOT-143 package featuring dual emitters. Key electrical limits include a collector-emitter voltage (VCEO) of 8 V and a continuous collector current of 250 mA. Total power dissipation reaches 400 mW at a soldering point temperature up to 60 °C. In pulsed class-AB operation at 1.9 GHz with a duty cycle under 1:8, it delivers 200 mW output power with a gain of at least 5 dB and efficiency exceeding 50%.

Feature Summary

  • High power gain and efficiency suitable for discrete power amplifiers
  • Gold metallization ensures excellent reliability
  • Ruggedness capable of withstanding load mismatch corresponding to VSWR = 8:1 through all phases

Applications

  • Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to confirm pin configuration. The BFG10 variant uses pin 2 as base, while the BFG10/X variant swaps pins 2 and 3. Ensure compatibility with the target PCB footprint before procurement. Confirm RoHS compliance status via official channels.

Selection Notes

Select this component for low-voltage, high-frequency RF power amplification tasks requiring robust performance. Evaluate thermal management requirements carefully, as total power dissipation is limited to 400 mW. Verify that the operating voltage remains within the 8 V collector-emitter limit and that drive levels support the required output power without exceeding absolute maximum ratings.

Part Context

This component belongs to the BFG10 series of NPN RF power transistors manufactured by NXP Semiconductors. It shares the same core electrical specifications and physical package as the standard BFG10 model. The primary distinction lies in the internal pinout arrangement within the SOT-143 enclosure, which affects circuit board layout but not functional parameters.

Replacement Considerations

Direct substitutes must match the SOT-143 package, 8 V VCEO rating, and 2 GHz frequency capability. Verify pinout compatibility between the BFG10 and BFG10/X variants if swapping between them. No other specific replacement part numbers are documented in the provided source material.

BFG10/X,215BFG10/X,215
$0.88
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