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The BFG10/X,215 is an NPN silicon planar epitaxial RF power transistor designed for high-frequency applications. It operates in the 1.9 GHz area with a maximum frequency rating of 2 GHz. The device is housed in a plastic SOT-143 package featuring dual emitters. Key electrical limits include a collector-emitter voltage (VCEO) of 8 V and a continuous collector current of 250 mA. Total power dissipation reaches 400 mW at a soldering point temperature up to 60 °C. In pulsed class-AB operation at 1.9 GHz with a duty cycle under 1:8, it delivers 200 mW output power with a gain of at least 5 dB and efficiency exceeding 50%.
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm pin configuration. The BFG10 variant uses pin 2 as base, while the BFG10/X variant swaps pins 2 and 3. Ensure compatibility with the target PCB footprint before procurement. Confirm RoHS compliance status via official channels.
Select this component for low-voltage, high-frequency RF power amplification tasks requiring robust performance. Evaluate thermal management requirements carefully, as total power dissipation is limited to 400 mW. Verify that the operating voltage remains within the 8 V collector-emitter limit and that drive levels support the required output power without exceeding absolute maximum ratings.
This component belongs to the BFG10 series of NPN RF power transistors manufactured by NXP Semiconductors. It shares the same core electrical specifications and physical package as the standard BFG10 model. The primary distinction lies in the internal pinout arrangement within the SOT-143 enclosure, which affects circuit board layout but not functional parameters.
Direct substitutes must match the SOT-143 package, 8 V VCEO rating, and 2 GHz frequency capability. Verify pinout compatibility between the BFG10 and BFG10/X variants if swapping between them. No other specific replacement part numbers are documented in the provided source material.