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Product Detailed Parameters
- Description：RF TRANS NPN 15V 6GHZ SOT-223-4
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：15V
- Frequency - Transition：6GHz
- Noise Figure (dB Typ @ f)：1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
- Gain：9dB ~ 14dB
- Power - Max：1W
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 100mA, 8V
- Current - Collector (Ic) (Max)：150mA
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：TO-261-4, TO-261AA
- Supplier Device Package：PG-SOT223-4
- Grade：-
- Qualification：-
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Overview
The BFG135AE6327XT is an NPN RF bipolar transistor manufactured by Infineon Technologies, designed for low-noise amplification applications up to 6 GHz. It features a collector-emitter breakdown voltage of 15 V and a continuous collector current rating of 150 mA. The device operates within a power dissipation limit of 1 W and utilizes the PG-SOT223-4 surface-mount package. Key electrical characteristics include a transition frequency of 6 GHz and a typical noise figure ranging from 1.5 dB to 2.6 dB at frequencies between 900 MHz and 1.8 GHz.
Feature Summary
- Optimized for low-noise amplification in radio frequency circuits
- Capable of operation at frequencies up to 6 GHz
- Designed for high-efficiency signal processing with minimal noise interference
Applications
- Low-noise amplifier stages in communication systems
- RF signal processing modules
- Wireless transmission equipment components
Procurement Notes
Verify the specific part number against official Infineon documentation to ensure compatibility with intended RF circuit designs. Confirm that the PG-SOT223-4 package dimensions align with PCB layout requirements. Check for any recent product lifecycle updates or alternative recommendations directly from the manufacturer's technical resources before finalizing procurement decisions.
Selection Notes
Select this component when designing circuits requiring low noise figures at frequencies up to 6 GHz. Ensure the 15 V breakdown voltage and 150 mA current limits suit the system's operational parameters. Consider the thermal management capabilities provided by the 1 W power dissipation rating within the specified package type for reliable performance.
Part Context
This component belongs to Infineon's portfolio of RF bipolar transistors engineered for high-frequency performance. It serves as a specialized solution for applications demanding precise signal amplification with minimal added noise. The device integrates robust electrical characteristics suitable for modern wireless communication architectures.
Replacement Considerations
Consult official Infineon documentation for verified substitute part numbers. Do not assume cross-compatibility with other RF transistors without validating electrical specifications and pin configurations against the original design requirements.
