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The BFG325W/XR,115 is an NPN silicon planar epitaxial transistor designed for Radio Frequency (RF) front-end applications in the GHz range. It features a 4-pin dual-emitter SOT343R plastic package with reverse pinning and gold metallization for reliability. Key electrical parameters include a collector-base voltage of 15 V, collector-emitter voltage of 6 V, and DC collector current up to 35 mA. The device offers a transition frequency of 14 GHz, maximum power gain of 18.3 dB at 1.8 GHz, and insertion power gain of 14 dB at 1.8 GHz. Noise figure is typically 1.1 dB at 2 GHz. Total power dissipation is rated at 210 mW with junction temperature up to 175 °C.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status as specified in official documentation. Check for product discontinuation notices or end-of-life announcements prior to procurement. Ensure storage conditions meet moisture sensitivity level requirements. Validate part marking codes against ordering information to prevent counterfeit risks.
Select this component for high-frequency RF front-end designs requiring low noise and high gain. Verify operating conditions stay within limiting values for collector-base and emitter-base voltages. Consider thermal resistance characteristics for heat dissipation in compact surface-mount layouts. Match impedance networks to 50 Ohm source and load conditions for optimal gain performance.
This device belongs to the BFG31 series of NPN wideband transistors manufactured by NXP USA Inc. It utilizes a CMPAK-4 package variant corresponding to the SOT343R outline. The product data sheet defines its specifications for production use, distinguishing it from earlier draft versions or objective specification documents.
Publicly confirmed substitute part numbers are not available in the provided datasheet. Designers should consult NXP sales offices or authorized distributors for equivalent recommendations if this specific part number becomes unavailable.