BFG591,115

BFG591,115

$0.98
  • Description:RF TRANS NPN 15V 7GHZ SC-73
  • Series:-

SKU:a8dc6f31f432 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF TRANS NPN 15V 7GHZ SC-73
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):15V
  • Frequency - Transition:7GHz
  • Noise Figure (dB Typ @ f):-
  • Gain:-
  • Power - Max:2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 70mA, 8V
  • Current - Collector (Ic) (Max):200mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-261-4, TO-261AA
  • Supplier Device Package:SC-73
  • Grade:-
  • Qualification:-

Download product information

BFG591,115

Overview

The BFG591,115 is an NPN silicon planar epitaxial wideband transistor manufactured by NXP Semiconductors. It is housed in a plastic SOT223 (SC-73) package with four leads and gold metallization for reliability. The device operates with a maximum collector-emitter voltage of 15 V and supports a DC collector current up to 200 mA. Key electrical parameters include a transition frequency of 7 GHz at IC=70 mA and VCE=12 V, and a maximum unilateral power gain of 13 dB at 900 MHz under the same bias conditions. Total power dissipation reaches 2 W when the soldering point temperature is maintained at or below 80 °C.

Feature Summary

  • High power gain suitable for broadband RF applications
  • Low noise figure optimized for signal integrity
  • Gold metallization ensures excellent long-term reliability
  • Integrated ESD protection mechanisms

Applications

  • MATV amplifiers operating in the GHz range
  • CATV amplifiers requiring wideband performance
  • RF communications subscriber equipment

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package orientation and tape reel specifications. Confirm RoHS compliance status as required by regional regulations. Ensure thermal management design accounts for the junction-to-soldering point thermal resistance rating during operation.

Selection Notes

Select this component for designs requiring high transition frequency and low noise in the GHz spectrum. Evaluate the thermal resistance characteristics to ensure adequate heat sinking for the specified power dissipation limits. Verify that the operating voltage and current levels remain within the absolute maximum ratings to prevent permanent damage.

Part Context

This part belongs to the NXP discrete semiconductor portfolio, specifically categorized as an NPN wideband transistor. It is designed for high-frequency analog and RF circuit applications where broad bandwidth and stable gain are critical requirements for system performance.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains compatible pinout configurations, package dimensions, and electrical characteristics such as transition frequency and power gain.

BFG591,115BFG591,115
$0.98
Buy Now