BFP 720F E6327

Overview

The BFP 720F E6327 is an NPN Silicon Germanium (SiGe) RF bipolar junction transistor manufactured by Infineon Technologies. It operates at a transition frequency of 43 GHz with a maximum collector-emitter voltage of 4.2 V and continuous collector current of 30 mA. The device dissipates up to 100 mW of power and features a DC current gain minimum of 160. Packaged in SOT-343 for surface mount applications, it supports an operating temperature range from -65°C to +150°C.

Feature Summary

• Utilizes SiGe technology for high-frequency performance
• Designed for RF signal processing applications
• Single configuration suitable for compact designs

Applications

• RF communication systems
• Wireless infrastructure components
• High-frequency signal amplification

Procurement Notes

Verify the specific suffix against official Infineon documentation to confirm exact ordering details. Confirm availability status as distribution channels may vary. Ensure compatibility with existing PCB footprints before procurement. Check for any recent lifecycle updates or obsolescence notices directly from the manufacturer.

Selection Notes

Select this component when a 43 GHz transition frequency and low voltage operation are required. Compare the 100 mW power dissipation limit against thermal management capabilities. Verify that the SOT-343 package fits the design constraints. Ensure the 30 mA current rating meets the circuit requirements.

Part Context

This part belongs to the BFP720 series of RF transistors. It shares the core SiGe architecture with other variants in the family but differs in packaging and specific electrical tolerances. The E6327 suffix indicates a specific tape and reel configuration used by distributors.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data. Consult Infineon technical support for direct replacements or pin-compatible alternatives within the BFP series.