BFP183WE6327BTSA1

Overview

The BFP183WE6327BTSA1 is a low noise silicon bipolar RF transistor designed for broadband amplifiers operating at collector currents between 2 mA and 30 mA. It features a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. The device is housed in an SOT-343 package with a maximum collector-emitter voltage (VCEO) of 12 V and a total power dissipation of 450 mW. DC current gain (hFE) ranges from 70 to 140, while maximum stable power gain reaches 22 dB at 900 MHz.

Feature Summary

• Optimized for low noise and high-gain broadband amplifier applications
• High transition frequency supporting wideband signal processing
• Pb-free and halogen-free package compliant with RoHS standards

Applications

• Low noise amplifiers for wireless communication systems
• Broadband RF front-end modules
• Signal conditioning circuits requiring minimal noise insertion

Procurement Notes

Verify the component against the official Infineon datasheet specifications before integration. Confirm that the ordering suffix matches the required packaging format. Ensure handling precautions are observed due to electrostatic discharge sensitivity during assembly and storage processes.

Selection Notes

Select this component when designing circuits requiring a minimum noise figure of 0.9 dB at 900 MHz. Ensure the operating collector current remains within the 2 mA to 30 mA range for optimal performance. Verify thermal management capabilities as the total power dissipation is limited to 450 mW under specified conditions.

Part Context

This part belongs to the BFP183W series of low noise silicon bipolar RF transistors manufactured by Infineon Technologies. It shares the same core electrical characteristics and package type as other variants within the family, differing primarily in the specific ordering suffix which denotes packaging details.

Replacement Considerations

Direct substitutes include other BFP183W variants such as BFP182W or BFP184W if pin compatibility and electrical parameters align with the design requirements. Verify replacement components against the original datasheet to ensure equivalent noise figures and gain characteristics.