BFP183WH6327XTSA1

Overview

The BFP183WH6327XTSA1 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. It features an NPN structure housed in a SOT-343 (SOT343) surface-mount package with four pins. Key electrical parameters include a collector-emitter breakdown voltage of 12 V, a maximum collector current of 65 mA, and a transition frequency of 8 GHz at 500 MHz. The device achieves a minimum noise figure of 0.9 dB at 900 MHz and 1.4 dB at 1.8 GHz. It operates within a junction temperature range up to 150 °C and supports a total power dissipation of 450 mW.

Feature Summary

• Designed for low noise and high-gain broadband amplifier applications
• Optimized performance across collector currents from 2 mA to 30 mA
• Pb-free and halogen-free compliant packaging

Applications

• Low noise amplifiers
• High-gain broadband amplifiers

Procurement Notes

Verify the component against official Infineon documentation to confirm authenticity and specifications. Ensure that the ordering suffix matches the required reel or cut tape configuration. Confirm RoHS compliance status and check for any specific handling precautions related to electrostatic discharge sensitivity during procurement and storage.

Selection Notes

Select this component when designing circuits requiring low noise figures around 900 MHz and 1.8 GHz frequencies. Consider the 12 V collector-emitter voltage rating and 65 mA current limit for biasing requirements. Evaluate thermal resistance characteristics if operating near maximum power dissipation limits.

Part Context

This part belongs to the BFP183W series of low noise silicon bipolar RF transistors produced by Infineon Technologies. It shares the core device characteristics with other variants in the family but utilizes the H6327XTSA1 suffix to denote specific packaging and reel configurations.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.