BFP196WE6327HTSA1

Overview

The BFP196WE6327HTSA1 is an NPN silicon RF bipolar transistor from the BFP196 series, housed in a SOT-343 package. It features a collector-emitter voltage (VCEO) of 12 V and a maximum collector current (IC) of 150 mA. The device has a transition frequency (fT) of 7.5 GHz at IC = 70 mA and VCE = 8 V. At 900 MHz with IC = 20 mA, it achieves a minimum noise figure (NFmin) of 1.3 dB. Total power dissipation is rated at 700 mW for junction temperatures up to 150 °C.

Feature Summary

• Designed for low noise and low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz.
• Suitable for power amplifier applications in DECT and PCN systems.
• Features Pb-free and halogen-free packaging with visible leads.

Applications

• Low noise, low distortion broadband amplifiers in antenna systems
• Broadband amplifiers in telecommunications systems up to 1.5 GHz
• Power amplifiers for DECT systems
• Power amplifiers for PCN systems

Procurement Notes

Verify component authenticity by checking the marking code 'RI' against official Infineon documentation. Confirm the package type is SOT-343 and the ordering code matches BFP196WH6327XTSA1. Ensure handling precautions are followed due to ESD sensitivity. Cross-reference datasheet revision dates to ensure compatibility with design requirements.

Selection Notes

Select this component when designing circuits requiring high linearity and low noise figures around 900 MHz to 1.8 GHz. Consider the 12 V collector-emitter voltage limit and 700 mW power dissipation capability. Evaluate thermal resistance characteristics if operating near maximum junction temperatures. Verify impedance matching networks align with the specified gain and noise parameters.

Part Context

This part belongs to the BFP196 family of low noise silicon bipolar RF transistors manufactured by Infineon Technologies. It is specifically optimized for broadband applications in the sub-1.5 GHz range. The H6327 suffix indicates specific tape and reel packaging configurations used for automated surface mount assembly processes.

Replacement Considerations

Direct substitutes include other parts within the BFP196 series such as BFP196WE6327HTSA1 or BFP196WH6327XTSA1 variants. Verify pin configuration and electrical parameters match before substitution. Consult Infineon for updated lifecycle status as components may reach end-of-life.

FAQ

What is the minimum noise figure at 900 MHz?

The minimum noise figure (NFmin) is 1.3 dB at 900 MHz with a collector current of 20 mA and VCE of 8 V.

What is the transition frequency (fT) of the BFP196W?

The transition frequency is 7.5 GHz, measured at IC = 70 mA and VCE = 8 V.

What is the maximum collector current rating?

The maximum continuous collector current (IC) is rated at 150 mA.