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The BFP196WH6327XTSA1 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. It operates with a collector-emitter voltage of 12 V and a maximum collector current of 150 mA, housed in an SOT-343 package. The device features a transition frequency (fT) of 7.5 GHz at 500 MHz and a minimum noise figure (NFmin) of 1.3 dB at 900 MHz. Total power dissipation reaches 700 mW at a case temperature of 69°C. DC current gain is specified between 70 and 140 at 50 mA. Qualification follows the AEC-Q101 standard.
Verify component authenticity through authorized distribution channels. Confirm that the ordering suffix H6327XTSA1 corresponds to the specific reel packaging format required for production integration. Ensure handling precautions are observed due to electrostatic discharge sensitivity during storage and assembly processes.
Select this component when designing circuits requiring high linearity and minimal signal degradation within the sub-1.5 GHz frequency range. Evaluate thermal management requirements against the 700 mW dissipation limit and the 115 K/W junction-to-solder-point resistance. Verify biasing conditions align with the specified 8 V collector-emitter voltage for optimal noise and gain performance.
This part belongs to the BFP196 series of low noise silicon bipolar RF transistors produced by Infineon Technologies. The specific designation includes the H6327XTSA1 suffix indicating the tape and reel packaging configuration. The device utilizes standard silicon technology optimized for radio frequency applications requiring stable operation across varying environmental temperatures.
Publicly confirmed substitute part numbers are not available in the provided documentation.