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Product Detailed Parameters
- Description：RF TRANS NPN 12V 7.5GHZ SOT343-4
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：7.5GHz
- Noise Figure (dB Typ @ f)：1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
- Gain：19dB
- Power - Max：700mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 50mA, 8V
- Current - Collector (Ic) (Max)：150mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-82A, SOT-343
- Supplier Device Package：PG-SOT343-4-1
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The BFP196WH6740 is an NPN silicon RF bipolar transistor from the Infineon BFP196 series, housed in a SOT343 package. It is designed for low noise and low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz. Key electrical parameters include a transition frequency (fT) of 7.5 GHz at 500 MHz, a minimum noise figure (NFmin) of 1.3 dB at 900 MHz, and a maximum collector-emitter voltage (VCEO) of 12 V. The device supports a maximum collector current of 150 mA and total power dissipation of 700 mW.
Feature Summary
- Optimized for low noise and low distortion performance in broadband amplifier applications
- Suitable for DECT and PCN system power amplification
- Features high transition frequency for operation in telecommunications bands
Applications
- Low noise, low distortion broadband amplifiers in antenna systems
- Telecommunications systems operating up to 1.5 GHz
- Power amplifiers for DECT and PCN systems
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm availability and exact specifications. Confirm RoHS compliance status and check for any end-of-life notices or alternative component recommendations directly with the manufacturer before finalizing procurement plans.
Selection Notes
Select this component for designs requiring low noise figures around 900 MHz and high linearity up to 1.5 GHz. Ensure biasing conditions align with the specified collector currents between 20 mA and 80 mA for optimal performance characteristics as defined in the datasheet.
Part Context
This part belongs to the BFP196 family of low noise silicon bipolar RF transistors manufactured by Infineon Technologies. The series is characterized by its suitability for mobile communication infrastructure and consumer wireless devices requiring high gain and low noise performance.
Replacement Considerations
Consult the official datasheet for qualified substitute part numbers within the same product family or equivalent specifications from other manufacturers.
