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Product Detailed Parameters
- Description：RF TRANS NPN 5.5V 25GHZ 4-TSFP
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：5.5V
- Frequency - Transition：25GHz
- Noise Figure (dB Typ @ f)：1.1dB @ 1.8GHz
- Gain：19.5dB
- Power - Max：160mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 5mA, 4V
- Current - Collector (Ic) (Max)：35mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：4-SMD, Flat Leads
- Supplier Device Package：4-TSFP
- Grade：-
- Qualification：-
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Overview
The BFP420FH6327XTSA1 is an NPN silicon RF bipolar transistor from Infineon Technologies, designed for high-frequency applications. It operates with a maximum collector-emitter voltage of 5V and supports a transition frequency of 25GHz. The device features a typical noise figure of 1.1dB at 1.8GHz and provides a gain of 21dB. It handles a maximum collector current of 35mA and dissipates up to 160mW of power. Packaged in a PG-SOT343-3D surface-mount format, it is suitable for low-noise amplifier stages in wireless infrastructure.
Feature Summary
- High transition frequency capability for ultra-wideband signal processing
- Low noise figure performance optimized for sensitive receiver front-ends
- Automotive qualification compliant with AEC-Q100 standards
Applications
- Wireless infrastructure driver amplifiers
- Low-noise amplifier (LNA) stages in 5G base stations
- RF signal conditioning in small cell access points
Procurement Notes
Verify component authenticity through authorized distribution channels due to end-of-life status. Confirm package integrity upon receipt as the device utilizes a small outline transistor form factor. Ensure storage conditions meet moisture sensitivity level requirements prior to soldering. Cross-reference datasheet revisions to confirm pinout consistency during integration.
Selection Notes
Select this component when a 25GHz transition frequency and 1.1dB noise figure are required in a compact SOT-343 footprint. Consider the 5V breakdown voltage limit for low-voltage supply designs. Evaluate thermal management capabilities given the 160mW power dissipation rating in dense PCB layouts.
Part Context
This part belongs to the BFP420 series of silicon RF transistors manufactured by Infineon Technologies. It shares the core electrical characteristics of the BFP420 family but utilizes specific packaging and tape-and-reel configuration indicated by the suffix. The series targets high-performance RF applications requiring miniaturization and reliability.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative RF transistors based on matching transition frequency, noise figure, and package dimensions before implementation.
