BFP460E6327HTSA1

Overview

The BFP460E6327HTSA1 is an NPN silicon RF transistor designed for general-purpose low-noise amplifier applications in low voltage and low current environments. It features a transition frequency of 22 GHz at 1 GHz, with a minimum noise figure as low as 0.7 dB at 100 MHz and 1.1 dB at 1.8 GHz. The device operates with a collector-emitter voltage of 4.5 V and supports a maximum collector current of 70 mA. Packaged in the SOT-343 surface-mount format, it offers high linearity with an output compression point of 13 dBm at 1.8 GHz under specific bias conditions.

Feature Summary

• High ESD robustness rated at typical 1500V (HBM)
• Low minimum noise figure optimized for low voltage operation
• High linearity performance with defined output compression points
• Qualified according to AEC Q101 standards

Applications

• General purpose low noise amplifiers
• Low voltage circuit designs
• Low current application circuits

Procurement Notes

Verify component authenticity by checking the manufacturer's marking code against official documentation. Confirm RoHS compliance status through the supplier's declaration. Ensure proper electrostatic discharge handling precautions are observed during storage and assembly due to the device's sensitivity.

Selection Notes

Select this component for designs requiring high linearity and low noise in compact surface-mount layouts. Evaluate thermal resistance parameters relative to the PCB soldering point temperature. Consider the specific bias requirements for optimal gain and noise figure performance across the target frequency range.

Part Context

This part belongs to the BFP460 series of NPN silicon RF transistors manufactured by Infineon Technologies. The 'E6327' suffix indicates the specific tape and reel packaging configuration compatible with standard automated assembly equipment. The HTSA1 designation typically denotes automotive-grade qualification or specific manufacturing lot tracking within the product family.

Replacement Considerations

Direct substitutes must match the SOT-343 package and NPN silicon RF characteristics. Verify that alternative components meet the required 22 GHz transition frequency and 4.5 V collector-emitter voltage limits. Cross-reference pin configurations to ensure compatibility with existing board layouts.

FAQ

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is 4.5 V at temperatures above 0 °C.

How does the device perform regarding noise figure?

The minimum noise figure is 0.7 dB at 100 MHz and 1.1 dB at 1.8 GHz under specified bias conditions.

Is the component qualified for automotive applications?

Yes, the BFP460 is qualified according to the AEC Q101 standard.