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The BFP460E6433HTMA1 is an NPN silicon RF transistor designed for low voltage, low current applications. It features a transition frequency of 22 GHz and a minimum noise figure of 1.1 dB at 1.8 GHz. The device operates with a collector-emitter breakdown voltage of 5.8 V and supports a maximum collector current of 70 mA. Total power dissipation reaches 230 mW. It is housed in a SOT343 package and complies with AEC-Q101 standards.
Verify the component against the official Infineon datasheet dated May 17, 2010. Confirm that the marking code matches 'ABs' on the SOT343 package. Ensure the part number suffix aligns with the specific reel configuration required for your manufacturing process.
Select this component when designing circuits requiring high gain and low noise at frequencies up to 3 GHz. Consider the 230 mW power dissipation limit and the 70 mA maximum collector current when determining biasing conditions for optimal linearity and thermal management.
This part belongs to the BFP460 series of NPN silicon RF transistors manufactured by Infineon Technologies. It is specifically engineered for general-purpose low-noise amplification in compact electronic systems requiring high-frequency performance.
Consult the official Infineon documentation for verified substitute part numbers. Do not assume cross-compatibility with other RF transistor models without verifying electrical parameters and pin configurations.
The transition frequency is typically 22 GHz when measured at IC = 30 mA and VCE = 3 V.
The minimum noise figure is 1.1 dB at 1.8 GHz, measured at VCE = 3 V and IC = 5 mA.
Yes, the device is qualified according to the AEC-Q101 standard.