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The BFP460H6327XTSA1 is an NPN silicon RF bipolar junction transistor manufactured by Infineon Technologies. It operates at frequencies up to 22 GHz with a maximum collector-emitter voltage of 4.5 V and continuous collector current of 50 mA. The device features a minimum DC current gain (hFE) of 90 and dissipates up to 200 mW of power. Packaged in a compact SOT-343 surface-mount format, it supports operation across a temperature range from -65°C to +150°C. This component is designed for high-frequency applications requiring reliable signal amplification within specified electrical limits.
Verify the specific ordering suffix H6327XTSA1 against official Infineon documentation to confirm packaging and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's latest datasheet or material declaration. Check for end-of-life or not-for-new-design statuses prior to procurement planning.
Select this component when a small-form-factor NPN transistor is required for frequencies near 22 GHz. Ensure the circuit design accommodates the 4.5 V maximum voltage rating and 50 mA current limit. Verify thermal management requirements align with the 200 mW power dissipation capability in the SOT-343 package.
This part belongs to Infineon's BFP series of RF bipolar transistors. The H6327XTSA1 suffix indicates specific packaging and handling characteristics defined by the manufacturer. It serves as a discrete solution for RF front-end stages where integrated MMICs are not feasible or cost-effective.
Publicly confirmed substitute part numbers are not available in the provided source data. Consult Infineon's official replacement guide or contact technical support for validated cross-reference information.