BFP460H6433XTMA1

BFP460H6433XTMA1

$0.15
  • Description:RF TRANS NPN 5.8V 22GHZ SOT-343
  • Series:-

SKU:3e60df3b1c8c Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 5.8V 22GHZ SOT-343
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):5.8V
  • Frequency - Transition:22GHz
  • Noise Figure (dB Typ @ f):0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
  • Gain:12.5dB ~ 26.5dB
  • Power - Max:230mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:90 @ 20mA, 3V
  • Current - Collector (Ic) (Max):70mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-82A, SOT-343
  • Supplier Device Package:PG-SOT343-3D
  • Grade:-
  • Qualification:-

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BFP460H6433XTMA1

Overview

The BFP460H6433XTMA1 is an NPN silicon RF transistor designed for low voltage, low current applications. It features a SOT343 package with visible leads and AEC-Q101 qualification. Key electrical parameters include a collector-emitter breakdown voltage of 4.5 V at IC = 1 mA, a maximum collector current of 70 mA, and a total power dissipation of 230 mW. The device exhibits a transition frequency (fT) of 22 GHz typical value at IC = 30 mA and VCE = 3 V. Minimum noise figures are specified as 0.7 dB at 100 MHz, 1.1 dB at 1.8 GHz, and 1.2 dB at 3 GHz under optimized source impedance conditions.

Feature Summary

  • High linearity performance with output compression points up to 13 dBm at 1.8 GHz
  • Low minimum noise figure suitable for general purpose low noise amplification
  • High ESD robustness rated at a typical 1500V using the Human Body Model

Applications

  • General purpose low noise amplifier circuits
  • Low voltage RF signal processing stages
  • Low current portable communication devices

Procurement Notes

Verify component authenticity by checking the manufacturer marking 'ABs' on the SOT343 package against official Infineon documentation. Confirm the part number suffix matches the specific reel configuration required for your assembly process. Ensure handling precautions are followed due to electrostatic discharge sensitivity.

Selection Notes

Select this component when designing for low voltage operation below 4.5 V and requiring high gain in the UHF to microwave range. Consider the thermal resistance of 250 K/W and the need for adequate heat sinking if operating near the maximum power dissipation limit. Verify that the required bias currents align with the specified DC characteristics for optimal noise and gain performance.

Part Context

This part belongs to the BFP460 series of NPN silicon RF transistors manufactured by Infineon Technologies. It is specifically engineered for RF applications where low noise and high linearity are critical. The H6433XTMA1 suffix indicates the specific tape and reel packaging format used for automated surface mount assembly.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided datasheet or supporting documentation.

FAQ

What is the typical ESD protection level of the BFP460?

The device offers high ESD robustness with a typical rating of 1500V according to the Human Body Model.

How does the transition frequency vary with collector current?

The transition frequency (fT) typically reaches 22 GHz at a collector current of 30 mA and VCE of 3 V, as verified by random sampling.

What is the maximum collector-base voltage rating?

The maximum collector-base voltage (VCBO) is rated at 15 V.

BFP460H6433XTMA1BFP460H6433XTMA1
$0.15
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