BFP540H6327XTSA1

Overview

The BFP540H6327XTSA1 is a surface-mount silicon NPN RF bipolar transistor from Infineon's fifth-generation family, utilizing the SIEGET™ grounded emitter architecture. It features an integrated ESD structure for high robustness and low noise performance. Key electrical parameters include a transition frequency (fT) of 30 GHz at VCE = 4 V and IC = 50 mA, and a maximum collector-emitter voltage (VCEO) of 4.5 V. The device supports a continuous collector current of 80 mA with a total power dissipation of 250 mW. DC current gain (hFE) ranges from 50 to 170. It is housed in a compact SOT-343 package.

Feature Summary

• SIEGET™ grounded emitter technology providing high gain and low noise figure
• Integrated electrostatic discharge (ESD) protection structure
• Qualified for industrial applications per AEC-Q101 standards

Applications

• Radio-frequency oscillators such as local oscillators in LNBs
• Broadband low noise amplifiers (LNAs) for CATV, DVB-T, DAB/DMB, and FM/AM radio
• Low noise amplifiers for wireless communications including cordless phones

Procurement Notes

Verify component authenticity by cross-referencing the ordering code BFP540H6327XTSA1 with official Infineon documentation. Confirm that the delivered parts match the specified SOT-343 package and pin configuration. Ensure handling procedures account for the device's sensitivity to electrostatic discharge during storage and assembly.

Selection Notes

Select this component for designs requiring high-frequency operation up to 30 GHz with minimal signal degradation. The low noise figure makes it suitable for sensitive receiver front-ends. Verify that the circuit biasing conditions align with the specified operating points for optimal gain and linearity performance within the thermal constraints of the SOT-343 package.

Part Context

This part belongs to the BFP540 series of RF bipolar transistors manufactured by Infineon Technologies. It represents a specific variant within the established fifth-generation family, distinguished by its ESD-hardened design and optimized performance for broadband low-noise amplifier applications in consumer and industrial electronics.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided datasheet. Evaluate alternative components based on matching fT, VCEO, and package dimensions. Ensure any replacement maintains equivalent noise figure and gain characteristics for the target application frequency range.