BFP640FH6327XTSA1

$0.34

Description：RF TRANS NPN 4.5V 40GHZ 4-TSFP
Series：-

SKU:09b986a5b8df Category: Bipolar RF Transistors Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 4.5V 40GHZ 4-TSFP
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：4.5V
Frequency - Transition：40GHz
Noise Figure (dB Typ @ f)：0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Gain：23dB
Power - Max：200mW
DC Current Gain (hFE) (Min) @ Ic, Vce：110 @ 30mA, 3V
Current - Collector (Ic) (Max)：50mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：4-SMD, Flat Leads
Supplier Device Package：4-TSFP
Grade：-
Qualification：-

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BFP640FH6327XTSA1

Overview

The BFP640FH6327XTSA1 is an RF bipolar transistor manufactured by Infineon Technologies, belonging to the BFP640 series. It utilizes silicon technology and is housed in a TSFP-4 package. The component holds AEC-Q100 qualification for automotive applications. Official specifications list the collector continuous current at 50 mA and power dissipation at 200 mW. The emitter-base voltage (VEBO) is specified as 4.8 V. The device is currently marked with an end-of-life status, indicating it will be discontinued by the manufacturer.

Feature Summary

AEC-Q100 qualified for automotive reliability standards
Silicon-based RF bipolar transistor design
TSFP-4 surface mount packaging

Applications

Automotive radio frequency circuits
General RF signal processing
Bipolar transistor switching applications

Procurement Notes

Verify the active lifecycle status before procurement, as official documentation indicates this part number is subject to discontinuation. Confirm that the TSFP-4 package dimensions align with existing board layouts. Ensure compatibility with the specified 4.8 V emitter-base voltage limit within the target circuit design parameters.

Selection Notes

Select this component when AEC-Q100 compliance is required for silicon RF bipolar transistors. The TSFP-4 package suits space-constrained surface mount designs. Consider the 50 mA collector current and 200 mW power dissipation limits during thermal management planning. Evaluate alternative parts if long-term supply continuity is a critical project requirement due to the end-of-life designation.

Part Context

This part belongs to the BFP640 series of RF bipolar transistors from Infineon Technologies. The suffix H6327XTSA1 denotes specific tape-and-reel packaging and manufacturing lot details. It shares the core electrical characteristics of the BFP640 family while adhering to automotive qualification standards.