BFP840ESDH6327XTSA1

Overview

The BFP840ESDH6327XTSA1 is a SiGe:C NPN RF heterojunction bipolar transistor (HBT) with integrated ESD protection, designed for 5 GHz band applications. It features a transition frequency (fT) of 80 GHz and a maximum collector current (IC) of 35 mA. The device operates with a collector-emitter voltage (VCEO) of 2.25 V and supports up to 20 dBm RF input power. Key electrical parameters include a minimum noise figure (NFmin) of 0.85 dB at 5.5 GHz and a maximum power gain (Gms) of 22.5 dB under the same conditions. Qualified for industrial applications, it is housed in an SOT343 package.

Feature Summary

• Combines high end RF performance with robustness, supporting 20 dBm maximum RF input power and 1.5 kV HBM ESD hardness.
• High transition frequency of 80 GHz enables low noise figure operation at high frequencies.
• Integrated ESD protection suitable for sensitive mobile and fixed connectivity applications.

Applications

• Mobile and fixed connectivity applications: WLAN, WiMAX and UWB
• Satellite communication systems: satellite radio (SDARs, DAB), navigation systems (e.g. GPS, GLONASS, BeiDou, Galileo)

Procurement Notes

Verify component authenticity by checking the marking code T8s on the SOT343 package against official Infineon documentation. Confirm the ordering code matches BFP840ESDH6327XTSA1 exactly. Ensure handling precautions are followed due to ESD sensitivity. Validate that the device meets industrial application requirements as per JEDEC standards before integration into final designs.

Selection Notes

Select this component for 5 GHz band applications requiring high linearity and low noise. The integrated ESD protection simplifies design for mobile devices. Consider the 2.25 V maximum voltage rating when designing low voltage circuits operating at 1.2 V or 1.8 V. Higher supply voltages like 3.3 V require appropriate collector resistors to stay within absolute maximum ratings.

Part Context

This part belongs to the BFP840ESD series of SiGe:C NPN RF bipolar transistors manufactured by Infineon Technologies. It is specifically engineered for robustness and high-frequency performance in compact packages. The SOT343 form factor allows for space-efficient PCB layouts in modern wireless communication hardware.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided datasheet. Consult Infineon technical support for qualified alternatives if this specific ordering code is discontinued or unavailable.

FAQ

What is the maximum RF input power supported by the BFP840ESD?

The device supports a maximum RF input power of 20 dBm.

Is the BFP840ESDH6327XTSA1 qualified for automotive applications?

No, the datasheet states it is qualified for industrial applications according to JEDEC standards.

What is the typical transition frequency (fT) of this transistor?

The typical transition frequency is 80 GHz, measured at VCE = 1.8 V and IC = 25 mA.