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The BFQ 19S E6327 is an NPN silicon RF bipolar transistor manufactured by Infineon Technologies. It operates at a maximum frequency of 5.5 GHz with a collector-emitter voltage (VCEO) of 15 V and an emitter-base voltage (VEBO) of 3 V. The device supports a continuous collector current of 70 mA and features a minimum DC current gain (hFE) of 70. It is qualified under AEC-Q101 standards for automotive applications, functions as a single configuration component, and utilizes surface-mount technology (SMD/SMT). The operational temperature range spans from -65°C to +150°C.
Verify the specific suffix designation when sourcing this component, as variations exist within the BFQ19 series. Confirm availability status directly with authorized distributors or the manufacturer, as supply conditions may fluctuate. Ensure that the procurement channel provides valid traceability documentation to guarantee authenticity and compliance with specified technical parameters.
Select this component for designs requiring high-frequency NPN amplification within automotive environments. Verify that the 15 V collector-emitter voltage rating aligns with the circuit's power requirements. Ensure the PCB layout accommodates the surface-mount package type and that thermal management strategies support the specified operating temperature limits during continuous operation.
This part belongs to the BFQ19 series of RF bipolar transistors produced by Infineon Technologies. The series is designed for radio frequency applications, with this specific model offering a 5.5 GHz cutoff frequency. It shares the general architectural characteristics of the family but is distinguished by its specific electrical ratings and automotive qualification status.
BFQ19SH6327XTSA1