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The BFQ19SH6327XTSA1 is an NPN silicon RF bipolar transistor manufactured by Infineon Technologies. It operates at a maximum frequency of 1.5 GHz with a minimum DC collector-to-base current gain (hFE) of 70. The device supports a continuous collector current of 70 mA and withstands a maximum collector-emitter voltage (VCEO) of 15 V, alongside an emitter-base voltage (VEBO) rating of 3 V. Designed for surface-mount installation in single configurations, it functions within a temperature range of -65°C to +150°C. The component holds AEC-Q101 qualification and is supplied in reel, cut tape, or MouseReel packaging formats.
Verify the specific ordering suffix against official documentation to confirm package type and reel specifications. Confirm end-of-life status prior to procurement as the manufacturer indicates this product is obsolete. Ensure compatibility with existing supply chain requirements given the discontinued lifecycle stage.
Select this component when an NPN RF bipolar transistor with 1.5 GHz performance and AEC-Q101 automotive qualification is required. Verify that the 15 V collector-emitter voltage and 70 mA current ratings align with circuit demands. Consider the SMD/SMT mounting style and operating temperature range for environmental suitability.
This part belongs to the BFQ19 series of RF bipolar transistors from Infineon Technologies. It utilizes standard silicon planar technology designed for high-frequency operations. The H6327XTSA1 suffix denotes specific packaging and tape-and-reel configuration details defined by the manufacturer.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon documentation for recommended alternatives or cross-reference data sheets for compatible RF NPN transistors meeting similar electrical specifications.