BFR 182 B6663

Overview

The BFR182 is a low noise silicon bipolar RF transistor designed for broadband amplifiers operating at collector currents between 1 mA and 20 mA. It features an fT of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. The device is housed in a Pb-free SOT-23 package compliant with RoHS standards. Key electrical parameters include a collector-emitter breakdown voltage (VCEO) of 12 V, a maximum collector current (IC) of 35 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature of 93 °C. DC current gain (hFE) ranges from 70 to 140 at IC = 10 mA and VCE = 8 V.

Feature Summary

• Optimized for low noise and high-gain applications in broadband amplifier circuits
• Capable of operation across a wide frequency range with an fT of 8 GHz
• Designed for efficient performance at low collector currents ranging from 1 mA to 20 mA

Applications

• Low noise broadband amplifiers
• RF signal processing stages requiring minimal noise contribution
• High-gain amplifier designs operating within the specified current range

Procurement Notes

Verify component authenticity by checking the marking code 'RG' on the SOT-23 package against official Infineon documentation. Confirm RoHS compliance and Pb-free status through the manufacturer's certificate of conformity. Ensure handling precautions are followed due to ESD sensitivity. Cross-reference the specific ordering suffix if available to confirm packaging details such as tape and reel specifications.

Selection Notes

Select this component when designing circuits that require a silicon NPN RF transistor with a transition frequency of 8 GHz and a noise figure below 1 dB at 900 MHz. Ensure the design accommodates a maximum collector current of 35 mA and a collector-emitter voltage of 12 V. Consider the thermal resistance of 230 K/W for heat dissipation calculations in the SOT-23 package.

Part Context

The BFR182 belongs to Infineon Technologies' portfolio of low noise silicon bipolar RF transistors. It is specifically engineered for applications demanding high gain and low noise figures in the radio frequency spectrum. The device utilizes standard silicon technology and is packaged in the compact SOT-23 form factor, suitable for space-constrained PCB layouts.

Replacement Considerations

Consult the official Infineon cross-reference list or datasheet for verified substitute part numbers. Do not assume functional equivalence based solely on package type or general specifications without verifying electrical parameters such as fT, NFmin, and maximum ratings.