BFR 360F E6765

Overview

The BFR 360F E6765 is an NPN silicon RF bipolar transistor designed for low-noise amplifier applications. It operates with a collector-emitter voltage of 6 V and supports frequencies up to 14 GHz, with transition frequency (fT) reaching 14 GHz at 15 mA. The device features a minimum noise figure of 1 dB at 1.8 GHz and delivers a maximum available power gain of 15.5 dB at the same frequency. It is housed in a TSFP-3 package with a total power dissipation rating of 210 mW.

Feature Summary

• Low noise figure of 1.0 dB at 1.8 GHz
• High gain performance suitable for low current amplifiers
• Collector design optimized for 5V supply voltage operation

Applications

• Low noise amplifiers for FM and AM radio
• Oscillators operating up to 3.5 GHz
• Sub-1 GHz ISM band applications

Procurement Notes

Verify component authenticity through authorized Infineon channels or certified distributors. Confirm RoHS compliance and AEC-Q101 qualification status prior to integration. Ensure proper ESD handling protocols are followed during storage and assembly due to device sensitivity.

Selection Notes

Select this component for designs requiring low noise figures at 1.8 GHz with moderate power consumption. Evaluate thermal resistance requirements against the 210 mW dissipation limit. Consider the TSFP-3 package dimensions for PCB layout constraints.

Part Context

This part belongs to Infineon's third-generation RF bipolar transistor family. It is specifically engineered for cost-effective, low-current amplifier solutions without compromising ease of use or performance metrics essential for consumer electronics.

Replacement Considerations

Public confirmed substitute part numbers: 2SC2714-Y(TE85L,F), CPH6001A-TL-E.