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Product Detailed Parameters
- Description：RF TRANS NPN 9V 14GHZ PG-SC75-3D
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：9V
- Frequency - Transition：14GHz
- Noise Figure (dB Typ @ f)：1dB @ 1.8GHz
- Gain：13.5dB
- Power - Max：210mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 15mA, 3V
- Current - Collector (Ic) (Max)：35mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：PG-SC75-3D
- Grade：-
- Qualification：-
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Overview
The BFR360T is an NPN silicon RF transistor designed for low voltage and low current applications. It operates up to a maximum frequency of 3.5 GHz with a collector-emitter breakdown voltage (V(BR)CEO) of 6 V and a maximum collector current of 35 mA. The device features a minimum noise figure of 1.0 dB at 1.8 GHz and a transition frequency (fT) of 14 GHz. Maximum power dissipation is 210 mW, and the junction temperature rating reaches 150 °C. It is housed in an SC75 package.
Feature Summary
- Optimized for low noise amplifiers and oscillators operating up to 3.5 GHz
- Capable of delivering output power greater than 10 dBm
- Features a low noise figure of 1.0 dB at 1.8 GHz
Applications
- Low noise amplifiers
- Oscillators up to 3.5 GHz
Procurement Notes
Verify component authenticity by checking markings against official datasheet specifications. Confirm package type matches the required SC75 footprint. Ensure handling precautions are followed due to electrostatic discharge sensitivity. Validate that the specific ordering suffix aligns with the intended packaging configuration before finalizing procurement orders.
Selection Notes
Select this component when designing circuits requiring low noise performance at frequencies up to 3.5 GHz. Consider the 6 V collector-emitter voltage limit and 35 mA maximum current constraints during biasing. Evaluate thermal management requirements given the 210 mW power dissipation capability and the specific thermal resistance characteristics of the SC75 package.
Part Context
This part belongs to Infineon's portfolio of silicon RF transistors. It shares design similarities with other low-voltage RF bipolar devices within the manufacturer's lineup, tailored for communication systems requiring high linearity and low noise figures in compact surface-mount packages.
Replacement Considerations
Consult official replacement lists for verified substitutes. Cross-reference pin configurations and electrical parameters such as V(BR)CEO and fT to ensure compatibility.
