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The BFR 380F E6327 is an NPN silicon RF bipolar transistor from Infineon Technologies, designed for high-frequency applications up to 14 GHz. It features a maximum collector-emitter voltage (VCEO) of 6 V and an emitter-base voltage (VEBO) of 2 V. The device supports a continuous collector current of 80 mA with a power dissipation (Pd) of 380 mW. Operating within a temperature range of -55 °C to +150 °C, it utilizes a TSLP-3 surface-mount package. This component belongs to the BFR380L3 series and is identified by aliases including SP000013562.
Verify the exact part number against official manufacturer documentation before procurement. Confirm that the specific suffix matches required specifications. Check current lifecycle status as components may be subject to obsolescence. Ensure compatibility with existing design parameters and thermal requirements.
Select this component based on its 14 GHz operational limit and 380 mW power handling capability. Consider the TSLP-3 package for space-constrained designs. Evaluate the 6 V voltage rating against circuit requirements. Verify thermal management needs given the operating temperature range.
This transistor is part of Infineon's BFR380L3 series of RF bipolar devices. It shares characteristics with other members like the BFR 340L3 but offers distinct current and power ratings. The series targets high-performance RF applications requiring reliable silicon-based solutions.
Publicly confirmed substitute part numbers are not available in the provided data. Consult official Infineon resources for potential cross-references or alternative components if this part is discontinued.