BFR193L3E6327XTMA1

BFR193L3E6327XTMA1

$0.26
  • Description:RF TRANS NPN 12V 8GHZ TSLP-3-1
  • Series:-

SKU:6ecd47a84c63 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 12V 8GHZ TSLP-3-1
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:8GHz
  • Noise Figure (dB Typ @ f):1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
  • Gain:12.5dB ~ 19dB
  • Power - Max:580mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 30mA, 8V
  • Current - Collector (Ic) (Max):80mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-101, SOT-883
  • Supplier Device Package:PG-TSLP-3-1
  • Grade:-
  • Qualification:-

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BFR193L3E6327XTMA1

Overview

The BFR193L3E6327XTMA1 is an NPN silicon RF bipolar transistor from Infineon Technologies, designed for high-frequency applications up to 8 GHz. It features a maximum collector-emitter voltage (VCEO) of 12 V and a continuous collector current of 80 mA. The device operates within a temperature range of -55°C to +150°C and dissipates up to 380 mW of power. Packaged in the TSLP-3 surface-mount format, it offers a minimum DC current gain (hFE) of 70. This component is suitable for RF amplifier stages requiring stable performance in compact designs.

Feature Summary

  • Optimized for RF signal amplification at frequencies up to 8 GHz
  • High thermal stability with operation up to 150°C junction temperature
  • Compact TSLP-3 surface-mount package for space-constrained PCB layouts

Applications

  • RF amplifier circuits in communication systems
  • Signal processing modules operating at microwave frequencies
  • Wireless infrastructure components requiring high linearity

Procurement Notes

Verify the specific ordering suffix E6327XTMA1 against official Infineon documentation to confirm pinout and electrical tolerances. Confirm RoHS compliance status through the manufacturer's environmental declaration. Check for end-of-life notices or production discontinuation alerts prior to finalizing procurement plans.

Selection Notes

Select this component when an NPN silicon RF transistor with 12 V breakdown and 8 GHz transition frequency is required. Ensure the design accommodates the 380 mW power dissipation limit and the TSLP-3 footprint. Compare hFE minimums against circuit requirements to ensure adequate gain margins at the target operating point.

Part Context

This part belongs to the BFR193 series of RF bipolar transistors from Infineon. The L3 variant specifically denotes the TSLP-3 packaging style. It shares core electrical characteristics with other BFR193 variants but differs in physical dimensions and mounting configuration, distinguishing it from SOT-323 or PG-TSFP-3 versions.

Replacement Considerations

Direct substitutes include BFR193FH6327XTSA1 and BFR193WH6327XTSA1, provided the package difference is acceptable. Verify that alternative packages maintain compatibility with the existing PCB layout and thermal management strategy before substitution.

BFR193L3E6327XTMA1BFR193L3E6327XTMA1
$0.26
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