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The BFR193L3E6327XTMA1 is an NPN silicon RF bipolar transistor from Infineon Technologies, designed for high-frequency applications up to 8 GHz. It features a maximum collector-emitter voltage (VCEO) of 12 V and a continuous collector current of 80 mA. The device operates within a temperature range of -55°C to +150°C and dissipates up to 380 mW of power. Packaged in the TSLP-3 surface-mount format, it offers a minimum DC current gain (hFE) of 70. This component is suitable for RF amplifier stages requiring stable performance in compact designs.
Verify the specific ordering suffix E6327XTMA1 against official Infineon documentation to confirm pinout and electrical tolerances. Confirm RoHS compliance status through the manufacturer's environmental declaration. Check for end-of-life notices or production discontinuation alerts prior to finalizing procurement plans.
Select this component when an NPN silicon RF transistor with 12 V breakdown and 8 GHz transition frequency is required. Ensure the design accommodates the 380 mW power dissipation limit and the TSLP-3 footprint. Compare hFE minimums against circuit requirements to ensure adequate gain margins at the target operating point.
This part belongs to the BFR193 series of RF bipolar transistors from Infineon. The L3 variant specifically denotes the TSLP-3 packaging style. It shares core electrical characteristics with other BFR193 variants but differs in physical dimensions and mounting configuration, distinguishing it from SOT-323 or PG-TSFP-3 versions.
Direct substitutes include BFR193FH6327XTSA1 and BFR193WH6327XTSA1, provided the package difference is acceptable. Verify that alternative packages maintain compatibility with the existing PCB layout and thermal management strategy before substitution.