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Product Detailed Parameters
- Description：JFET N-CH 10MA SOT23
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：25 V
- Current - Drain (Idss) @ Vds (Vgs=0)：4 mA @ 10 V
- Current Drain (Id) - Max：10 mA
- Voltage - Cutoff (VGS off) @ Id：5 V @ 0.5 nA
- Input Capacitance (Ciss) (Max) @ Vds：4pF @ 10V
- Resistance - RDS(On)：-
- Power - Max：250 mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23 (TO-236AB)
- Grade：-
- Qualification：-
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Overview
The BFR30,215 is an N-channel field-effect transistor manufactured by NXP Semiconductors. It features a planar epitaxial symmetrical junction design housed in a plastic SOT23 surface-mounted package. The device supports a drain-source voltage of ±25 V and a total power dissipation of 250 mW at temperatures up to 40 °C. Key electrical characteristics include a drain current (IDSS) range of 4 mA to 10 mA for the BFR30 variant, with a common-source transfer admittance (|yfs|) between 1 mS and 4 mS at 1 kHz. The component operates with a maximum junction temperature of 150 °C and includes interchangeable drain and source terminals.
Feature Summary
- Symmetrical N-channel junction structure allowing interchangeable drain and source connections
- Low noise performance suitable for sensitive signal amplification
- Compact SOT23 surface-mount packaging for space-constrained designs
Applications
- Low level general purpose amplifiers in thick film circuits
- Low level general purpose amplifiers in thin film circuits
Procurement Notes
Verify the specific ordering suffix matches the required tape-and-reel quantity and orientation. Confirm the RoHS compliance status aligns with current environmental regulations for your region. Ensure anti-static handling procedures are followed during transport and assembly to prevent electrostatic discharge damage to the gate oxide layer.
Selection Notes
Select the BFR30 variant when higher drain current and transfer admittance are required compared to the BFR31. Consider the thermal resistance of 430 K/W when designing heat dissipation strategies for ambient temperatures exceeding 40 °C. Verify that the ±25 V voltage rating meets the circuit's peak operating conditions without exceeding absolute maximum ratings.
Part Context
This component belongs to the N-channel field-effect transistor family from NXP Semiconductors. It is functionally related to the BFR31 model, which shares the same package and basic topology but differs in specific current and admittance parameters. Both devices utilize the SOT23 (TO-236AB) plastic surface-mounted package format.
Replacement Considerations
The BFR31 is a documented alternative within the same product specification sheet. When substituting, verify that the lower IDSS and |yfs| values of the BFR31 meet the circuit requirements. No other cross-compatible part numbers are listed in the official documentation.
