BFR30,235

Overview

The BFR30,235 is an N-channel symmetrical junction field-effect transistor manufactured by NXP Semiconductors. It utilizes a planar epitaxial structure and is housed in a plastic SOT-23 (TO-236AB) surface-mount package with three terminals. The device features interchangeable drain and source pins. Key electrical parameters include a maximum drain-source voltage of ±25 V and a total power dissipation of 250 mW at temperatures up to 40 °C. The BFR30 variant specifies a drain current range of 4 mA to 10 mA at VGS=0 V and VDS=10 V, with a common-source transfer admittance between 1 mS and 4 mS.

Feature Summary

• Symmetrical N-channel design allowing interchangeable drain and source connections for flexible circuit integration.

Applications

• Low level general purpose amplifiers in thick-film circuits
• Low level general purpose amplifiers in thin-film circuits

Procurement Notes

Verify the component authenticity against the official NXP datasheet specifications. Confirm the marking code 'M1p' corresponds to the BFR30 variant. Ensure handling procedures account for electrostatic discharge sensitivity as indicated in the product documentation.

Selection Notes

Select this component for low-level amplification tasks requiring a compact SOT-23 footprint. Consider the BFR31 variant if lower drain current characteristics are required. Evaluate thermal resistance limits when designing for ambient temperatures exceeding 40 °C.

Part Context

This part belongs to the BFR series of N-channel field-effect transistors produced by NXP Semiconductors. The series includes the BFR30 and BFR31 variants, which share identical physical packaging but differ in specific electrical performance metrics such as drain current and transfer admittance ranges.

Replacement Considerations

No official substitute part numbers are documented in the provided data sheet. Designers should verify pinout compatibility and electrical parameter margins before considering alternative manufacturers or packages.