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Product Detailed Parameters
- Description：JFET N-CH SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：25 V
- Current - Drain (Idss) @ Vds (Vgs=0)：4 mA @ 10 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：5 V @ 0.5 nA
- Input Capacitance (Ciss) (Max) @ Vds：5pF @ 10V
- Resistance - RDS(On)：-
- Power - Max：225 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The BFR30LT1G is an N-channel JFET amplifier manufactured by onsemi, designed for VHF and UHF applications. It operates within a temperature range of -55°C to +150°C and features a maximum power dissipation of 310 mW. The device provides a drain-source breakdown voltage of 25 V and a gate-source cutoff voltage of up to -4 V. With a continuous drain current rating of 10 mA and a transition frequency of 1.8 GHz, it supports high-frequency signal processing in compact SOT-23 packages.
Feature Summary
- Optimized for low-noise amplification in VHF and UHF frequency bands
- Capable of operation at elevated junction temperatures up to 150°C
- Utilizes a compact surface-mount SOT-23 package for space-constrained designs
Applications
- VHF/UHF RF amplifier stages
- Low-noise signal conditioning circuits
- High-frequency oscillator buffers
Procurement Notes
Verify the component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm that the specific order matches the BFR30LT1G designation and required packaging format. Ensure compliance with relevant environmental standards such as RoHS directives before finalizing procurement decisions.
Selection Notes
Select this component when designing circuits requiring N-channel JFET characteristics for frequencies up to 1.8 GHz. Consider the 25 V breakdown voltage and 10 mA current limits during biasing calculations. Evaluate thermal management requirements given the 310 mW power dissipation capability in the specified package.
Part Context
This part belongs to the BFR series of N-channel JFETs from onsemi, intended for radio frequency applications. It shares functional similarities with other devices in the family but offers specific electrical parameters tailored for VHF and UHF amplifier implementations. The LT1G suffix indicates the specific tape-and-reel packaging configuration.
Replacement Considerations
Direct substitutes include the BFR31LT1G, which shares similar N-channel JFET characteristics. Verify pinout compatibility and electrical parameter overlaps before substitution. Cross-reference datasheets to ensure performance metrics align with the original design requirements.
