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Product Detailed Parameters
- Description：JFET N-CH 10MA SOT23
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：25 V
- Current - Drain (Idss) @ Vds (Vgs=0)：1 mA @ 10 V
- Current Drain (Id) - Max：10 mA
- Voltage - Cutoff (VGS off) @ Id：2.5 V @ 0.5 nA
- Input Capacitance (Ciss) (Max) @ Vds：4pF @ 10V
- Resistance - RDS(On)：-
- Power - Max：250 mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23 (TO-236AB)
- Grade：-
- Qualification：-
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Overview
The NXP BFR31,215 is a planar epitaxial symmetrical junction N-channel field-effect transistor housed in a plastic SOT23 surface-mounted package. It features interchangeable drain and source terminals. Key electrical parameters include a maximum drain-source voltage of ±25 V and a total power dissipation of 250 mW at temperatures up to 40 °C. The device exhibits a typical drain current (IDSS) range of 1 mA to 5 mA at VGS = 0 V and VDS = 10 V. Common-source transfer admittance (|yfs|) ranges from 1.5 mS to 4.5 mS at ID = 1 mA, VDS = 10 V, and f = 1 kHz. Thermal resistance from junction to ambient is specified at 430 K/W under standard mounting conditions.
Feature Summary
- Symmetrical junction design allowing interchangeable drain and source connections for flexible circuit layout.
Applications
- Low level general purpose amplifiers in thick film circuits.
- Low level general purpose amplifiers in thin film circuits.
Procurement Notes
Verify the specific ordering suffix against the manufacturer's current product specification to ensure compatibility with required marking codes and packaging formats. Confirm that the component status remains active or qualified for production use before initiating procurement processes. Cross-reference the datasheet revision date to ensure all technical data aligns with the latest manufacturing standards.
Selection Notes
Select this component for applications requiring low-level signal amplification where symmetrical terminal configuration simplifies PCB routing. Ensure the operating environment maintains junction temperatures within the specified limits to preserve performance characteristics. Evaluate thermal management requirements carefully given the high thermal resistance value associated with the small outline package.
Part Context
The BFR31 belongs to a family of N-channel field-effect transistors designed for discrete semiconductor applications. It shares structural similarities with the BFR30 but differs in specific electrical thresholds such as gate-source voltage and drain current ranges. This component serves as a fundamental building block for analog signal processing stages in mixed-signal environments.
Replacement Considerations
Consult official substitution lists for verified alternatives. Generic replacements may not match the symmetrical junction characteristics or specific admittance curves. Verify pinout compatibility and thermal resistance values when considering cross-brand components.
