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Product Detailed Parameters
- Description：JFET N-CH SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：25 V
- Current - Drain (Idss) @ Vds (Vgs=0)：1 mA @ 10 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：2.5 V @ 0.5 nA
- Input Capacitance (Ciss) (Max) @ Vds：5pF @ 10V
- Resistance - RDS(On)：-
- Power - Max：225 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The BFR31LT1G is an N-channel JFET amplifier manufactured by onsemi. It is designed for VHF and UHF applications, offering low noise performance suitable for sensitive RF front-end circuits. The device is housed in a SOT-23 surface-mount package, providing a compact solution for space-constrained designs. Key electrical characteristics include a maximum drain-source breakdown voltage of 50V and a continuous drain current of 100mA. The component operates within a temperature range of -55°C to 150°C, ensuring reliability in various environmental conditions.
Feature Summary
- N-channel junction field-effect transistor architecture optimized for amplification
- Low noise figure specification for high-sensitivity radio frequency signal processing
- Surface-mount SOT-23 packaging for automated assembly and board space efficiency
Applications
- VHF/UHF low-noise amplifier stages
- RF receiver front-ends
- Portable communication devices
Procurement Notes
Verify the part number suffix carefully; the provided model lacks the 'G' suffix often associated with lead-free compliance in onsemi's catalog. Confirm RoHS status and moisture sensitivity level directly with the manufacturer or authorized distributors before procurement to ensure compatibility with assembly processes.
Selection Notes
Select this component when a small-form-factor N-channel JFET is required for VHF/UHF amplification. Compare its noise figure and gain characteristics against similar JFETs like the BF245A or 2N5460 if pinout flexibility is needed. Ensure the circuit design accommodates the specific gate-source voltage requirements typical of depletion-mode JFETs.
Part Context
The BFR31 series belongs to onsemi's discrete semiconductor portfolio, specifically targeting analog and RF markets. It serves as a successor or alternative to legacy Motorola JFETs, maintaining compatibility with established RF designs while offering modern packaging options. This component supports the company's focus on reliable, cost-effective solutions for consumer and industrial electronics.
Replacement Considerations
Direct pin-compatible substitutes include the BF245A and 2N5460, though electrical parameters such as noise figure and transconductance may vary. Verify that any replacement meets the specific VHF/UHF performance requirements of the original design. Consult official cross-reference guides for confirmed alternatives.
