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Product Detailed Parameters
- Description：JFET N-CH SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：25 V
- Current - Drain (Idss) @ Vds (Vgs=0)：1 mA @ 10 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：2.5 V @ 0.5 nA
- Input Capacitance (Ciss) (Max) @ Vds：5pF @ 10V
- Resistance - RDS(On)：-
- Power - Max：225 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The BFR31LT1G is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It is housed in a SOT-23 surface-mount package and designed for amplifier applications. The device features a lead-free package compliant with environmental standards. Key electrical characteristics include a drain-source breakdown voltage of 40 V and a gate-source breakdown voltage of 25 V. The continuous drain current is rated at 50 mA, with a maximum power dissipation of 300 mW. The device operates within a temperature range of -55°C to +150°C.
Feature Summary
- N-channel JFET configuration optimized for amplifier circuits
- Lead-free packaging adhering to RoHS directives
- Compact SOT-23 surface-mount footprint
Applications
- VHF/UHF amplifier stages
- Low-noise signal amplification
- General-purpose analog circuitry
Procurement Notes
Verify the component authenticity through official onsemi channels or authorized distributors. Confirm the specific datasheet revision matches the production batch requirements. Ensure the SOT-23 pinout aligns with the target PCB layout design before integration into the manufacturing process.
Selection Notes
Select this component when an N-channel JFET with moderate voltage ratings and low noise performance is required in a compact form factor. Compare the 40 V breakdown voltage and 50 mA current limits against circuit demands. Consider thermal management capabilities given the 300 mW power dissipation rating in the small outline package.
Part Context
This part belongs to the family of discrete JFET amplifiers produced by onsemi. It serves as a solid-state solution for high-frequency analog applications where low noise and stable gain are critical. The SOT-23 package allows for automated assembly in space-constrained electronic designs.
Replacement Considerations
Public documentation lists the BFR30LT1G as a similar N-channel JFET amplifier from Motorola/ON Semiconductor. Verify pin compatibility and electrical parameters such as breakdown voltage and transconductance before substituting other generic N-channel JFETs.
