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The BFR35APE6327HTSA1 is an NPN silicon RF bipolar transistor manufactured by Infineon Technologies. It operates within the L-band frequency range, featuring a maximum collector-emitter voltage of 15 V and a maximum collector current of 45 mA. The device is housed in a compact SOT-23-3 surface-mount package and supports a maximum power dissipation of 280 mW. Designed for high-frequency applications, it includes AEC-Q100 automotive qualification. The component has reached its end-of-life status, indicating that production will cease.
This component has officially reached its end-of-life status, meaning Infineon Technologies will discontinue manufacturing. Buyers should verify final shipment dates and consider alternative sourcing strategies immediately. Availability is limited to existing stock or last-time buys. Ensure all procurement activities account for the cessation of new production runs.
Select this part only if L-band performance and automotive qualification are required. Due to the end-of-life status, long-term supply assurance is not guaranteed. Evaluate design-in risks carefully against available alternatives. Verify that the SOT-23-3 footprint and electrical parameters match the specific circuit requirements before committing to this obsolete component.
The BFR35APE6327HTSA1 belongs to the BFR35 series of RF transistors from Infineon. This series is designed for general-purpose RF applications requiring small-signal amplification. The specific suffix indicates tape-and-reel packaging. As an NPN silicon device, it serves as a foundational active component in radio frequency front-end designs.
Publicly confirmed substitute part numbers are not available in the provided documentation. Given the end-of-life status, engineers must identify functional equivalents independently based on pinout compatibility and RF performance specifications.