BFR360FH6327XTSA1

Overview

The BFR360FH6327XTSA1 is an NPN silicon RF bipolar transistor manufactured by Infineon Technologies. It operates with a maximum collector-emitter breakdown voltage of 9V and a transition frequency of 14GHz. The device supports a continuous collector current of 35mA and handles a maximum power dissipation of 210mW. DC current gain (hFE) is specified at a minimum of 90 under conditions of 15mA collector current and 3V Vce. Noise performance includes a typical noise figure of 1dB at 1.8GHz, with a gain of 15.5dB. It is housed in a PG-TSFP-3 surface-mount package, equivalent to SOT-723, and is rated for junction temperatures up to 150°C.

Feature Summary

• High-frequency operation capability up to 14GHz transition frequency suitable for RF applications
• Low noise figure specification of 1dB at 1.8GHz for signal integrity
• Automotive qualification compliant with AEC-Q100 standards
• Compact surface-mount packaging design for space-constrained layouts

Applications

• RF amplifier stages in communication systems
• Signal processing circuits requiring low noise performance
• Automotive electronic modules utilizing AEC-Q100 qualified components

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific suffix H6327XTSA1 matches required reel specifications. Check for end-of-life status as indicated in public records. Ensure RoHS compliance documentation aligns with project requirements. Validate package type PG-TSFP-3 compatibility with PCB footprint designs prior to ordering.

Selection Notes

Select this component when designing circuits requiring high-frequency NPN amplification with low noise characteristics. The 9V breakdown voltage limits suitability for high-voltage applications. Consider the 35mA current limit for load driving capabilities. The TSFP-3 package requires appropriate thermal management strategies due to the 210mW power dissipation rating. Verify interface compatibility with existing system architectures before integration.

Part Context

This part belongs to the BFR360 series of RF bipolar transistors from Infineon Technologies. It shares the core BFR360 architecture but utilizes the H6327XTSA1 suffix to denote specific packaging and tape-and-reel configuration. The PG-TSFP-3 package distinguishes it from other variants using different housing styles within the same functional family.

Replacement Considerations

Public records list five potential substitute part numbers for this component. Verify electrical parameter equivalence and pinout compatibility before substitution. Cross-reference datasheets to ensure transition frequency and noise figures meet original design specifications.