BFR360FH6765XTSA1

Overview

The BFR360FH6765XTSA1 is an NPN silicon RF bipolar transistor from Infineon Technologies, designed for low-noise and high-gain applications. It operates with a maximum collector-emitter voltage of 9V and a transition frequency of 14GHz. The device delivers a typical noise figure of 1dB at 1.8GHz and provides a gain of 15.5dB under standard test conditions. It supports a maximum continuous collector current of 35mA and dissipates up to 210mW of power. The component is housed in a TSFP-3 surface-mount package (SOT-723) and functions within a junction temperature range up to 150°C.

Feature Summary

• Optimized for low-noise amplification with minimal signal degradation at 1.8GHz
• High gain performance suitable for efficient signal boosting in RF circuits
• Low-profile TSFP-3 package design enabling compact surface-mount integration

Applications

• Low noise amplifiers (LNAs) for FM and AM radio receivers
• LNAs for sub-1 GHz ISM band applications
• General purpose RF signal amplification stages

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm package type and tape/reel specifications. Ensure compatibility with existing PCB footprints for the TSFP-3 package. Confirm that the component meets required environmental standards for the intended deployment environment before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring low noise figures around 1.8GHz with moderate power handling capabilities. The 9V breakdown voltage and 35mA current limit define the operational boundaries for biasing networks. Consider the thermal management requirements associated with the 210mW power dissipation rating in enclosed designs.

Part Context

This part belongs to the BFR360 family of low-profile silicon NPN RF bipolar transistors. It shares core electrical characteristics with variants like the BFR360FH6327XTSA1 but may differ in packaging or manufacturing lot specifications. The series is established for cost-effective, easy-to-use RF solutions in consumer electronics.

Replacement Considerations

Publicly documented substitutes include Toshiba's 2SC2714-Y(TE85L,F) and onsemi's CPH6001A-TL-E. Verify pinout compatibility and electrical parameter overlaps before substituting these components in active designs.