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The BFR380L3E6327XTMA1 is an NPN silicon RF bipolar transistor from Infineon Technologies, designed for high-frequency applications up to 14 GHz. It features a TSLP-3 surface-mount package and supports a maximum collector-emitter voltage (VCEO) of 6 V and an emitter-base voltage (VEBO) of 2 V. The device handles a continuous collector current of 80 mA with a power dissipation rating of 380 mW. Key electrical characteristics include a minimum DC current gain (hFE) of 90. Operating temperatures range from -55 °C to +150 °C, ensuring reliability in demanding environments.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official documentation before integration. Check for end-of-life notices as production status may affect long-term supply continuity. Ensure storage conditions maintain device integrity prior to assembly.
Select this component when designing circuits requiring NPN silicon RF transistors with operation up to 14 GHz. Consider the 6 V VCEO limit and 80 mA current capability for biasing requirements. The TSLP-3 package dictates specific footprint constraints on the printed circuit board layout.
This part belongs to the BFR380L3 series of RF bipolar transistors manufactured by Infineon Technologies. It represents a specific variant within the broader portfolio of silicon-based RF devices intended for high-frequency analog and radio frequency applications.
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing the component in existing designs.