BFR380L3E6327XTMA1

BFR380L3E6327XTMA1

$0.19
  • Description:RF TRANS NPN 9V 14GHZ TSLP-3-1
  • Series:-

SKU:5f5a9a724d87 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF TRANS NPN 9V 14GHZ TSLP-3-1
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):9V
  • Frequency - Transition:14GHz
  • Noise Figure (dB Typ @ f):0.5dB ~ 2.1dB @ 1.8GHz
  • Gain:7.5dB ~ 16.5dB
  • Power - Max:380mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:90 @ 40mA, 3V
  • Current - Collector (Ic) (Max):80mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-101, SOT-883
  • Supplier Device Package:PG-TSLP-3-1
  • Grade:-
  • Qualification:-

Download product information

BFR380L3E6327XTMA1

Overview

The BFR380L3E6327XTMA1 is an NPN silicon RF bipolar transistor from Infineon Technologies, designed for high-frequency applications up to 14 GHz. It features a TSLP-3 surface-mount package and supports a maximum collector-emitter voltage (VCEO) of 6 V and an emitter-base voltage (VEBO) of 2 V. The device handles a continuous collector current of 80 mA with a power dissipation rating of 380 mW. Key electrical characteristics include a minimum DC current gain (hFE) of 90. Operating temperatures range from -55 °C to +150 °C, ensuring reliability in demanding environments.

Feature Summary

  • Optimized for radio frequency amplification within the 14 GHz operational bandwidth
  • Utilizes a compact TSLP-3 surface-mount package for efficient PCB integration
  • Provides robust thermal performance with a maximum power dissipation of 380 mW

Applications

  • RF signal amplification in communication systems
  • High-frequency circuit design requiring NPN silicon transistors
  • Wireless infrastructure components operating at microwave frequencies

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official documentation before integration. Check for end-of-life notices as production status may affect long-term supply continuity. Ensure storage conditions maintain device integrity prior to assembly.

Selection Notes

Select this component when designing circuits requiring NPN silicon RF transistors with operation up to 14 GHz. Consider the 6 V VCEO limit and 80 mA current capability for biasing requirements. The TSLP-3 package dictates specific footprint constraints on the printed circuit board layout.

Part Context

This part belongs to the BFR380L3 series of RF bipolar transistors manufactured by Infineon Technologies. It represents a specific variant within the broader portfolio of silicon-based RF devices intended for high-frequency analog and radio frequency applications.

Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing the component in existing designs.

BFR380L3E6327XTMA1BFR380L3E6327XTMA1
$0.19
Buy Now