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Product Detailed Parameters
- Description：RF TRANS NPN 15V 9GHZ SOT-23
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：15V
- Frequency - Transition：9GHz
- Noise Figure (dB Typ @ f)：1.1dB ~ 2.1dB @ 900MHz
- Gain：-
- Power - Max：300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 20mA, 6V
- Current - Collector (Ic) (Max)：70mA
- Operating Temperature：175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23 (TO-236AB)
- Grade：-
- Qualification：-
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Overview
The BFR520 is an NPN silicon planar epitaxial transistor housed in a SOT-23 plastic package. It features a collector-emitter voltage of 15 V, a DC collector current limit of 70 mA, and a total power dissipation of 300 mW. The device achieves a transition frequency of 9 GHz with a typical maximum unilateral power gain of 15 dB at 900 MHz. DC current gain ranges from 60 to 250. Noise figure performance includes a typical minimum of 1.1 dB at 900 MHz with 5 mA collector current. Feedback capacitance is typically 0.4 pF.
Feature Summary
- High power gain suitable for wideband applications
- Low noise figure optimized for sensitive RF front ends
- High transition frequency supporting GHz range operations
- Gold metallization ensures excellent reliability
Applications
- Analog and digital cellular telephones
- Cordless telephones (CT1, CT2, DECT)
- Radar detectors
- Pagers and satellite TV tuners
- Repeater amplifiers in fiber-optic systems
Procurement Notes
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm the manufacturing origin, as codes indicate production in Hong Kong, Malaysia, or China. Ensure the component status matches current availability requirements before finalizing procurement plans.
Selection Notes
Select this component for designs requiring high-frequency operation up to 9 GHz with low noise characteristics. Confirm that the operating conditions remain within the specified collector-emitter voltage and current limits to maintain the guaranteed gain and noise performance metrics.
Part Context
This device belongs to the category of NPN silicon planar epitaxial transistors designed for surface mounting. It utilizes the SOT-23 package format, providing a compact solution for integrating high-performance RF components into space-constrained electronic circuits.
Replacement Considerations
Consult official substitution guides for compatible NPN transistors with matching SOT-23 packaging and similar RF performance specifications.
FAQ
What is the marking code for the BFR520?
The marking code for the BFR520 is '32' followed by a letter indicating the manufacturing location.
What is the thermal resistance from junction to soldering point?
The thermal resistance from junction to soldering point is typically 260 K/W.
What is the feedback capacitance value?
The feedback capacitance is typically 0.4 pF under conditions of zero collector current and 6 V collector-base voltage.
