BFR750L3RHE6327XTSA1

Description：RF TRANS NPN 4.7V 37GHZ TSLP-3
Series：-

SKU:698115917f48 Category: Bipolar RF Transistors Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 4.7V 37GHZ TSLP-3
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：4.7V
Frequency - Transition：37GHz
Noise Figure (dB Typ @ f)：0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
Gain：21dB
Power - Max：360mW
DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 60mA, 3V
Current - Collector (Ic) (Max)：90mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-101, SOT-883
Supplier Device Package：PG-TSLP-3
Grade：-
Qualification：-

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BFR750L3RHE6327XTSA1

Overview

The BFR750L3RHE6327XTSA1 is an NPN Silicon Germanium RF transistor designed for high-gain, ultra-low noise applications up to 10 GHz. It features a TSLP-3-9 leadless package with a maximum height of 0.32 mm and is AEC-Q101 qualified. Key electrical parameters include a collector-emitter voltage (VCEO) of 4 V, a continuous collector current (IC) of 90 mA, and a total power dissipation (Ptot) of 360 mW at a soldering point temperature of 96°C. The device exhibits a transition frequency (fT) of 37 GHz, a DC current gain (hFE) ranging from 160 to 400, and a typical noise figure of 0.6 dB at 1.8 GHz.

Feature Summary

High gain and ultra-low noise performance suitable for wireless applications up to 10 GHz
Optimized for WLAN and 5-6 GHz applications with high OIP3 and P-1dB characteristics
Extremely small and flat leadless package design reducing overall component height

Applications

Driver stages for wireless communication systems
WLAN amplifier circuits
Applications operating in the 5-6 GHz frequency range

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm package type and compliance status. Confirm that the requested part number matches the exact marking code R8 and pin configuration defined in the datasheet. Ensure procurement channels provide valid traceability for AEC-Q101 qualified components.

Selection Notes

Select this component when designing circuits requiring high linearity and low noise figures in the sub-10 GHz spectrum. Consider the 4 V collector-emitter voltage limit and 90 mA current capability during biasing. Evaluate the thermal resistance requirements given the 360 mW power dissipation rating in the TSLP-3-9 package.

Part Context

This component belongs to the BFR750L3 series of Silicon Germanium RF transistors manufactured by Infineon Technologies. It utilizes 150 GHz fT technology to deliver superior RF performance in a compact form factor. The product is specifically engineered to meet automotive reliability standards through its AEC-Q101 qualification.