BFR93A,215

Overview

The BFR93A,215 is an NPN silicon small-signal transistor manufactured by NXP Semiconductors. It is housed in a SOT-23 (TO-236AB) surface-mount package with three terminals. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 45 V. Key electrical characteristics include a DC current gain ranging from 110 to 220 at a collector current of 2 mA, and a transition frequency of 4 GHz at 100 MHz. The component operates within a junction temperature range of -55°C to +150°C and is compliant with RoHS standards.

Feature Summary

• High-frequency performance optimized for RF applications up to 4 GHz
• Low noise figure suitable for sensitive signal amplification stages
• Compact SOT-23 surface-mount packaging for automated assembly

Applications

• RF amplifier circuits in communication devices
• Low-noise amplification in receiver front-ends
• High-speed switching applications in consumer electronics

Procurement Notes

Verify the specific suffix 215 corresponds to the standard tape-and-reel packaging format required for your production line. Confirm that the RoHS compliance status matches your environmental regulations. Ensure the supplier provides valid traceability documentation for the semiconductor batch. Check for any specific handling instructions regarding electrostatic discharge during storage and installation.

Selection Notes

Select this component when designing circuits requiring high transition frequency and low noise characteristics in a compact form factor. Compare the 45 V collector-emitter voltage rating against your circuit's peak operating voltages to ensure adequate margin. Evaluate the thermal resistance of the SOT-23 package against your expected power dissipation levels. Consider the current gain spread if precise biasing stability is critical for your application design.

Part Context

This transistor belongs to NXP's portfolio of high-frequency small-signal bipolar junction transistors. It is designed for general-purpose RF and analog applications where size and speed are primary constraints. The device complements other NXP RF components used in wireless infrastructure and mobile handsets. Its specifications align with industry standards for low-power, high-performance discrete semiconductors.

Replacement Considerations

Consult official NXP documentation for qualified alternative part numbers within the same family or equivalent specifications from other manufacturers. Verify pinout compatibility and electrical parameter overlaps before substitution. Do not assume interchangeability without reviewing detailed datasheet comparisons for thermal and RF performance differences.