BFR93AW,135

BFR93AW,135

  • Description:RF TRANS NPN 12V 5GHZ SC-70
  • Series:-

SKU:df9920e18bbc Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 12V 5GHZ SC-70
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:5GHz
  • Noise Figure (dB Typ @ f):1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
  • Gain:-
  • Power - Max:300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 30mA, 5V
  • Current - Collector (Ic) (Max):35mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SC-70
  • Grade:-
  • Qualification:-

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BFR93AW,135

Overview

The BFR93AW,135 is a silicon NPN ultra-high frequency transistor manufactured by NXP USA Inc., utilizing an N-type epitaxial layer structure housed in a SOT-23 plastic surface-mount package. Key electrical parameters include a collector-emitter voltage of 12V and a maximum collector current of 30mA. The device exhibits a typical transition frequency (fT) of 6GHz at 800MHz, providing a power gain of 14.0dB with a noise figure of 1.6dB. It operates within a junction temperature range of -55°C to +150°C and features a DC current gain (hFE) ranging from 40 to 250 at 30mA.

Feature Summary

  • High transition frequency optimized for VHF/UHF and CATV band operations
  • Low noise figure suitable for sensitive RF front-end applications
  • High linearity with low intermodulation distortion characteristics

Applications

  • VHF and UHF low-noise amplifiers
  • CATV broadband amplifiers
  • RF module signal conditioning
  • Microwave communication systems

Procurement Notes

Verify the specific suffix '135' against official NXP documentation to confirm reel packaging specifications and tape-and-reel dimensions. Ensure compatibility with existing PCB footprints for the SOT-23 package. Cross-reference manufacturing dates and RoHS compliance status directly with the supplier's certificate of conformity prior to integration into production lines.

Selection Notes

Select this component when designing circuits requiring high-frequency performance up to 6GHz with minimal signal degradation. Consider the BFT93 as the complementary PNP variant if push-pull configurations are necessary. Evaluate thermal management requirements given the 150°C maximum junction temperature limit and ensure biasing networks support the specified 30mA operating current for optimal noise performance.

Part Context

The BFR93 series was originally introduced by Philips Semiconductors, now part of NXP, establishing a standard for high-frequency discrete transistors. The AW suffix typically denotes specific marking or packaging variations within the SOT-23 family. This component belongs to a lineage of RF transistors widely adopted in telecommunications infrastructure due to its balance of gain, noise, and power handling capabilities in compact surface-mount formats.

Replacement Considerations

Publicly confirmed substitute part numbers include BFR93A and BFR93R. Verify pinout compatibility and parameter tolerances before substitution. The BFT75R is also listed as a potential replacement in some contexts, though functional equivalence should be validated against specific circuit requirements.

BFR93AW,135BFR93AW,135

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