ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：RF TRANS 2 NPN 12V 8GHZ SOT363-6
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Transistor Type：2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：8GHz
- Noise Figure (dB Typ @ f)：0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
- Gain：20dB
- Power - Max：175mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 5mA, 8V
- Current - Collector (Ic) (Max)：20mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-VSSOP, SC-88, SOT-363
- Supplier Device Package：PG-SOT363-PO
- Grade：-
- Qualification：-
Download product information
Overview
The BFS 481 E6327 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. It integrates two galvanically isolated NPN transistors within a single SOT-363 package. The device features a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. Key electrical parameters include a collector-emitter voltage (VCEO) of 12 V, a maximum collector current (IC) of 20 mA, and a total power dissipation (Ptot) of 175 mW. DC current gain (hFE) ranges from 70 to 140 at IC = 5 mA and VCE = 8 V. The component operates within a junction temperature range of -55 °C to 150 °C.
Feature Summary
- Integrates two galvanically isolated transistors in one compact package
- Designed for low noise and high-gain broadband amplification
- Optimized for operation at collector currents between 0.5 mA and 12 mA
- RoHS compliant and halogen-free industry standard packaging
Applications
- Low noise broadband amplifiers
- RF front-end modules requiring dual isolated stages
- High-frequency signal processing circuits
Procurement Notes
Verify the specific ordering suffix E6327 against official Infineon documentation to confirm reel orientation and tape specifications. Ensure that the AEC-Q101 qualification report is reviewed if automotive reliability standards are required for the design. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to procurement.
Selection Notes
Select this component when dual isolated RF stages are needed in a minimal footprint. The SOT-363 package suits space-constrained designs. Evaluate the 175 mW power dissipation limit against thermal constraints. Consider the 0.9 dB noise figure for sensitive receiver applications operating near 900 MHz.
Part Context
The BFS 481 belongs to Infineon's family of low noise silicon bipolar RF transistors. The E6327 suffix denotes the specific reel packaging configuration. This component is part of the broader portfolio designed for high-frequency analog and RF applications requiring compact integration.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Consult Infineon technical support for cross-reference recommendations based on specific circuit requirements.
FAQ
What is the pin configuration for the BFS 481?
Pin 1 is Base 1, Pin 2 is Emitter 1, Pin 3 is Collector 1, Pin 4 is Base 2, Pin 5 is Emitter 2, and Pin 6 is Collector 2.
Is the BFS 481 qualified for automotive applications?
Yes, a qualification report according to AEC-Q101 is available for this component.
What is the typical power gain at 900 MHz?
The maximum stable power gain (Gms) is typically 20 dB at 900 MHz with IC = 5 mA and VCE = 8 V.
