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The BFS17,215 is an NPN silicon RF small signal transistor manufactured by NXP Semiconductors. It is housed in a SOT23 (TO-236AB) surface-mount package with three pins. The device is designed for VHF band applications and operates as a wideband transistor. Key electrical specifications include a maximum collector-emitter voltage of 300 V and a maximum collector current of 50 mA. The component exhibits a maximum collector capacitance of 1.6 pF and a minimum DC current gain (hFE) of 50. It supports operating temperatures up to 150 °C and complies with RoHS directives.
Verify the specific suffix 215 against the manufacturer's official datasheet to confirm packaging and tape-and-reel specifications. Ensure the component meets required environmental standards such as RoHS compliance before integration. Cross-reference the SOT23 package dimensions with PCB footprint requirements to guarantee mechanical compatibility during assembly.
Select this component for designs requiring high voltage handling in a compact surface-mount form factor. The low collector capacitance makes it suitable for high-frequency signal integrity. Evaluate the thermal performance characteristics against the system's heat dissipation capabilities to ensure reliable operation within the specified temperature range.
This part belongs to NXP's portfolio of silicon NPN transistors optimized for radio frequency applications. It serves as a discrete solution for amplification and switching in VHF bands. The BFS17 series provides a balance of ruggedness and efficiency for base station and communication equipment contexts.
Consult official substitution lists for equivalent NPN RF transistors in SOT23 packages. Verify pinout compatibility and electrical parameter overlaps before replacing the component in existing designs.