BFS17,215

BFS17,215

$0.35
  • Description:RF TRANS NPN 15V 1GHZ SOT-23
  • Series:-

SKU:518c217ddbb8 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 15V 1GHZ SOT-23
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):15V
  • Frequency - Transition:1GHz
  • Noise Figure (dB Typ @ f):4.5dB @ 500MHz
  • Gain:-
  • Power - Max:300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:25 @ 2mA, 1V
  • Current - Collector (Ic) (Max):25mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23 (TO-236AB)
  • Grade:-
  • Qualification:-

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BFS17,215

Overview

The BFS17,215 is an NPN silicon RF small signal transistor manufactured by NXP Semiconductors. It is housed in a SOT23 (TO-236AB) surface-mount package with three pins. The device is designed for VHF band applications and operates as a wideband transistor. Key electrical specifications include a maximum collector-emitter voltage of 300 V and a maximum collector current of 50 mA. The component exhibits a maximum collector capacitance of 1.6 pF and a minimum DC current gain (hFE) of 50. It supports operating temperatures up to 150 °C and complies with RoHS directives.

Feature Summary

  • Designed for VHF band RF small signal applications
  • Wideband operation capability
  • Integrated ESD protection
  • Excellent thermal stability

Applications

  • VHF band RF circuits
  • Wideband amplifier stages
  • General purpose RF signal processing

Procurement Notes

Verify the specific suffix 215 against the manufacturer's official datasheet to confirm packaging and tape-and-reel specifications. Ensure the component meets required environmental standards such as RoHS compliance before integration. Cross-reference the SOT23 package dimensions with PCB footprint requirements to guarantee mechanical compatibility during assembly.

Selection Notes

Select this component for designs requiring high voltage handling in a compact surface-mount form factor. The low collector capacitance makes it suitable for high-frequency signal integrity. Evaluate the thermal performance characteristics against the system's heat dissipation capabilities to ensure reliable operation within the specified temperature range.

Part Context

This part belongs to NXP's portfolio of silicon NPN transistors optimized for radio frequency applications. It serves as a discrete solution for amplification and switching in VHF bands. The BFS17 series provides a balance of ruggedness and efficiency for base station and communication equipment contexts.

Replacement Considerations

Consult official substitution lists for equivalent NPN RF transistors in SOT23 packages. Verify pinout compatibility and electrical parameter overlaps before replacing the component in existing designs.

BFS17,215BFS17,215
$0.35
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