BFS17SH6327XTSA1

Overview

The BFS17SH6327XTSA1 is an NPN bipolar power transistor manufactured by Infineon Technologies using silicon technology. It operates within a collector-emitter voltage (VCEO) of 15 V and an emitter-base voltage (VEBO) of 2.5 V. The device supports a continuous collector current of 25 mA with a minimum DC current gain (hFE) of 20. Designed for RF applications, it functions up to a frequency of 1 GHz. Power dissipation is rated at 280 mW, and the component operates reliably across a temperature range from -65 °C to +150 °C. It is housed in a SOT-363 surface-mount package.

Feature Summary

• NPN polarity configuration suitable for general-purpose switching and amplification tasks
• Silicon-based construction optimized for radio frequency operation up to 1 GHz
• Enhanced thermal stability allowing reliable performance at elevated temperatures up to 150 °C

Applications

• Radio frequency signal processing circuits
• General-purpose switching applications requiring low voltage operation
• Amplifier stages in consumer electronics

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm that the specific suffix matches the required specifications. Check for end-of-life status as discontinuation notices may affect long-term availability. Ensure compliance with RoHS directives before integration into final products.

Selection Notes

Select this component when an NPN transistor with 15 V breakdown voltage and 25 mA current capacity is required. Consider the SOT-363 package constraints for PCB layout. Evaluate the 280 mW power dissipation limit against thermal management requirements. Verify suitability for frequencies up to 1 GHz if used in RF contexts.

Part Context

This part belongs to the BFS17 series of small-signal bipolar transistors. It shares the core electrical characteristics with the BFS17S variant but utilizes the H6327XTSA1 packaging suffix indicating tape-and-reel delivery. The component is classified under RF bipolar transistors within Infineon's discrete semiconductor portfolio.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-reference with other NPN transistors featuring similar VCEO, IC, and package dimensions only after verifying electrical compatibility.