BFS17W,115

Overview

The BFS17W,115 is a dual N-channel enhancement mode field-effect transistor manufactured by NXP Semiconductors. It utilizes silicon technology and is housed in an SOT363 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 6 V. It is supplied in reel, cut tape, or MouseReel packaging formats. The component falls under the MOSFET product category within the transistors sub-category. The unit weight is recorded at approximately 5.790 mg. This specific part number variant includes the ,115 suffix indicating the standard tape and reel configuration.

Feature Summary

• Dual N-channel configuration for integrated switching applications
• Low voltage operation suitable for signal switching and level shifting
• Compact surface-mount design for space-constrained PCB layouts

Applications

• Signal switching in portable electronic devices
• Level shifting circuits in low-voltage digital systems
• Battery protection circuits in mobile equipment

Procurement Notes

Verify the exact ordering code including the suffix to ensure correct packaging format. Confirm RoHS compliance status through official documentation before integration. Check current availability as distribution status may vary by region. Ensure storage conditions meet semiconductor handling standards to prevent moisture sensitivity issues during assembly.

Selection Notes

Select this component when a dual N-channel MOSFET with a 6 V rating is required. Compare on-resistance and gate charge specifications against system requirements. Consider the SOT363 package dimensions for board space constraints. Verify thermal performance capabilities relative to the expected load current and ambient temperature conditions.

Part Context

This component belongs to NXP's discrete MOSFET portfolio designed for general-purpose switching. It complements other low-voltage transistors in the series offering similar electrical characteristics but different package options. The dual configuration allows for cost reduction in designs requiring multiple switching elements.

Replacement Considerations

Consult official substitution guides for equivalent dual N-channel MOSFETs with matching 6 V ratings and SOT363 packages. Verify pin compatibility and electrical parameters before replacing existing components in production designs.